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首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >Metal Etch with PR-free Process for 0.15 um Technology
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Metal Etch with PR-free Process for 0.15 um Technology

机译：0.15 um技术采用无PR工艺的金属蚀刻

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For the 0.15um technology with AlCu lines, one of the major challenges is the metal patterning due to the very thin resist applicable for lithography. The other challenge is that the etching bias of iso line must be minimized to enlarge the process window of contact/metal bridging. To achieve these goal, a 0.38um pitch of Al-0.5%Cu metal etch technology has been successfully demonstrated by hard mask approach. Hard mask process has better CD control capability than PR process. The etching bias of metal line with hard mask can be reduced to 0.025 um per side for semi-iso compared with 0.075um per side of PR process. This good CD control also enlarges the bridging window between contact and metal. Furthermore, the hardmask process is less sensitive to the resist type than the PR-mask process which will be very important for 0.15um technology. Insignificant etch microloading and good corrosion resistance are the other two advantages for this hard mask process.
机译：对于具有AlCu线的0.15um技术，主要挑战之一是金属图案化，这是因为适用于光刻的抗蚀剂非常薄。另一个挑战是必须最小化iso线的蚀刻偏压以扩大接触/金属桥接的工艺窗口。为了实现这些目标，已经通过硬掩模方法成功地证明了0.38um间距的Al-0.5％Cu金属蚀刻技术。硬掩模工艺比PR工艺具有更好的CD控制能力。相对于PR工艺的每侧0.075um，对于半iso来说，带有硬掩模的金属线的蚀刻偏置可以降低到每侧0.025um。这种良好的CD控制还扩大了触点和金属之间的桥接窗口。此外，与PR掩模工艺相比，硬掩模工艺对抗蚀剂类型的敏感性较低，这对于0.15um技术而言非常重要。微不足道的蚀刻微负载和良好的耐腐蚀性是该硬掩模工艺的另外两个优点。

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