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首页> 外文会议>Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA >Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15um damascene architecture
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Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15um damascene architecture

机译：0.15um镶嵌结构的螺旋波等离子体刻蚀机中有机低k电介质的刻蚀特性

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摘要

The comparative analysis of the dry etching of FLARE~TM 2.0 and a-C:F, which represent two different depositions techniques of organic low-k polymers was investigated. In our damascene architecture, the etching stop layer or hard-mask of both SiOF; SiO_2 was studied. Especially, the SIOF providing lower dielectric constant than SiO_2 would reduce entire effective dielectric constant. The etch rate and etching rate selectivity was optimized by changing content ratio between CHF_3, N_2, and O_2. Furthermore, the bias power, RF power; and gas flows were changed to control the etch profile. The SEM results showed that the better etch profile can be obtained at higher bias power. There wee some deviation deviation between etching rate of blanket with the case of patterned wafer. The distribution density of the reactant etching gas in sub-um gap different from blanket surface of wafer was major dynamics. Due to this thenomena, the etching rate became nonlinear function of process time T_etch in the trenches/vias with smaller dimension.
机译：研究了代表有机低k聚合物的两种不同沉积技术的FLARE〜TM 2.0和a-C：F干法刻蚀的对比分析。在我们的镶嵌结构中，SiOF的蚀刻停止层或硬掩模都可以。研究了SiO_2。特别是，提供比SiO_2更低的介电常数的SIOF将降低整个有效介电常数。通过改变CHF_3，N_2和O_2之间的含量比来优化蚀刻速率和蚀刻速率选择性。再者，偏置功率，RF功率；改变气流以控制蚀刻轮廓。 SEM结果表明，在更高的偏置功率下可以获得更好的刻蚀曲线。在图案化晶片的情况下，橡皮布的蚀刻速率之间存在一些偏差。主要反应动力学是反应活性刻蚀气体在小于晶圆盖层表面的亚微米间隙中的分布密度。由于该定理，在较小尺寸的沟槽/通孔中，蚀刻速率成为处理时间T_etch的非线性函数。

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