• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>European photovoltaic solar energy conference >EFFECT OF ANNEALING ON PECVD SILICON NITRIDE FILMS
【24h】

EFFECT OF ANNEALING ON PECVD SILICON NITRIDE FILMS

机译：退火对PECVD硅氮化膜的影响

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hydrogenated silicon nitride films (SiN_x:H) have been deposited by plasma enhanced chemical vapourdeposition with varying ratios of the silane to total gas ratio, R. The films were characterised by spectroscopicellipsometry to determine the refractive index (n), extinction coefficient (k) and the film thickness. As R was increased,more silicon (Si) was incorporated into the film, thus decreasing the nitrogen-to-Si ratio and increasing n. The increase ink and fall in optical band gap (E_g) was attributed to the propensity of the Si atoms to form Si-Si bonds. A plot ofk(400nm) versus n(633nm) revealed that our films had a slightly higher k than some of the studies in the literature. Thismay be attributed to the different mass densities of the films obtained by the different deposition techniques andparameters. Upon annealing, the films showed a decrease in film thickness as a result of hydrogen release. This lead tomass densification of the films and an increase in n. A decrease in Eg for all films with n>2 was attributed to theformation of Si-Si bonds combined with mass densification. The observation that the SiN_x:H film with n=1.89experienced an increase in E_g from 3.3eV to 3.9eV is discussed.
机译：等离子体增强化学气相沉积了氢化氮化硅膜（SiN_x：H） 硅烷与总气体比率R的不同比率进行气相沉积。通过分光镜对薄膜进行表征 椭圆偏振法测定折射率（n），消光系数（k）和膜厚度。随着R的增加， 膜中掺入了更多的硅（Si），因此降低了氮硅比并增加了n。增加 k和光学带隙的下降（E_g）归因于Si原子形成Si-Si键的倾向。的情节 k（400nm）与n（633nm）对比表明，我们的膜的k值比文献中的某些研究略高。这 可能归因于通过不同沉积技术获得的薄膜的不同质量密度，并且 参数。退火后，由于氢的释放，膜的厚度减小。这导致 膜的质量致密化和n的增加。对于所有n> 2的电影，Eg的降低归因于 Si-Si键的形成与质量致密化相结合。 n = 1.89的SiN_x：H膜的观察 讨论了将E_g从3.3eV增加到3.9eV的过程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号