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首页> 外文会议>European photovoltaic solar energy conference >STRUCTURAL AND ELECTRICAL PROPERTIES OF EPITAXIAL SI LAYERS PREPARED BY E-BEAM EVAPORATION
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STRUCTURAL AND ELECTRICAL PROPERTIES OF EPITAXIAL SI LAYERS PREPARED BY E-BEAM EVAPORATION

机译：电子束蒸发制备的外延Si层的结构和电学性质

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摘要

In this paper, structural and electrical properties of thin p-type Si films which are homoepitaxiallygrown at low substrate temperatures (T_s= 450-700 °C) with deposition rates of r_(Si)= 40-475 nm/min are discussed.Applying defect etching, films grown on Si(111) wafers exhibit a decreasing etch pit density with increasing T_s, andwith decreasing r_(Si). The defect etching of the films grown on poly-Si seed layers reveal regions of quite differentcrystalline quality with different underlying crystallographic orientations. The hole mobility of about 195 cm~2/Vs hasbeen measured for the films grown on Si(100) wafers. The temperature dependent Hall mobility measurements haveshown that the extended defects do not influence the hole mobility. Solar cells have been prepared on both Si(100)wafers and poly-Si seed layers. For this investigation, an open circuit voltage of 570 mV for wafer-based and 346mV for glass-based solar cells have been reached.
机译：本文研究了同质外延的p型Si薄膜的结构和电学性质 讨论了在低衬底温度（T_s = 450-700°C）下生长的r_（Si）= 40-475 nm / min的沉积速率。 应用缺陷刻蚀，在Si（111）晶片上生长的薄膜随着T_s的增加，刻蚀坑密度降低，并且 随着r_（Si）的减小。在多晶硅籽晶层上生长的薄膜的缺陷蚀刻显示出区域差异很大 具有不同基础晶体学取向的晶体质量。约195 cm〜2 / Vs的空穴迁移率 测量了在Si（100）晶片上生长的薄膜的厚度。与温度有关的霍尔迁移率测量值具有 表明扩展的缺陷不会影响空穴迁移率。在两个Si（100）上都准备了太阳能电池 晶圆和多晶硅籽晶层。对于此研究，基于晶片的346 m和346 m的开路电压为570 mV 玻璃基太阳能电池的mV已达到。

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