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首页> 外文会议>European photovoltaic solar energy conference >WET-CHEMICAL SURFACE PREPARATION AND ELECTRONIC INTERFACE PROPERTIES OF A-SI:H/C-SI HETERO-JUNCTION SOLAR CELLS
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WET-CHEMICAL SURFACE PREPARATION AND ELECTRONIC INTERFACE PROPERTIES OF A-SI:H/C-SI HETERO-JUNCTION SOLAR CELLS

机译：A-SI：H / C-SI异质结太阳能电池的湿化学表面制备和电子界面性质

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Wet-chemical cleaning and smoothing procedures were developed to minimise defect density andrecombination loss at the interface of structured silicon solar cell substrates. The recombination loss at a-Si:H/c-Siinterfaces prepared on c-Si substrates with randomly distributed upside pyramids, textured by anisotropic etching,was markedly reduced by an optimised wet-chemical smoothing procedure. It was shown that the optimized Sisurface state can be preserved and transferred into a recombination-poor a-Si:H/c-Si hetero-interface by soft a-Si:Hdeposition. Additional recombination via a-Si:H gap states was minimised by reduction of the a-Si:H gap statedensity applying an optimised CVD process. Surface photovoltage (SPV), photoluminescence (PL) measurementsand electron microscopy (SEM) investigations were utilised to investigate effectiveness of cleaning, smoothing andpassivation methods. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H(n)/c-Si(p)/Al) with texturedc-Si substrates the optimised smoothing procedure results in a significant increase of short circuit current I_(sc), fillfactor and enhance the solar cell efficiency η from 17.4% (confirmed) [1] up to 18.4%. The scatter in the cellparameters for measurements on different cells is much narrower, as compared to conventional pre-treatments,indicating more well-defined and reproducible surface conditions prior to a-Si:H emitter deposition.
机译：开发了湿化学清洁和平滑程序以最大程度地减少缺陷密度和 结构化硅太阳能电池基板界面处的复合损失。 a-Si：H / c-Si时的复合损失 在具有随机分布的上金字塔的c-Si基板上制备的界面，通过各向异性蚀刻进行织构化， 通过优化的湿化学平滑程序可以显着减少二氧化碳的排放。结果表明，优化后的硅 表面状态可以通过软a-Si：H保留并转移到重组不良的a-Si：H / c-Si异质界面中 沉积。通过减少a-Si：H的能隙状态使通过a-Si：H的能隙重组减少到最低限度 密度采用优化的CVD工艺。表面光电压（SPV），光致发光（PL）测量 和电子显微镜（SEM）研究被用来研究清洁，平滑和清洁的有效性。 钝化方法。用于具有晶体织构的非晶晶体异质结太阳能电池（ZnO / a-Si：H（n）/ c-Si（p）/ Al） c-Si基板的优化平滑程序导致短路电流I_（sc），填充量显着增加 并提高太阳能电池的效率η，从17.4％（已确认）[1]提高到18.4％。单元中的分散 与常规预处理相比，用于在不同细胞上进行测量的参数要窄得多， 表示在a-Si：H发射极沉积之前有更明确和可重现的表面条件。

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