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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Influences of asymmetrically distributed defect states at rear c-Si/a-Si:H interface on performances of silicon hetero-junction solar cells
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Influences of asymmetrically distributed defect states at rear c-Si/a-Si:H interface on performances of silicon hetero-junction solar cells

机译：后c-Si / a-Si：H界面处不对称分布的缺陷状态对硅异质结太阳能电池性能的影响

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摘要

The performances of silicon double hetero-junction solar cells are investigated by the numerical simulator ?Automat For Simulation of Hetero-structures (AFORS-HET)?. Asymmetrical distribution of acceptor and donor defect states at the rear hetero-junction interface is introduced in both a-Si:H(n)/c-Si(p)/a-Si:H(p~+) and a-Si:H(p)/c-Si(n)/a-Si:H(n ~+) structures in our study. The influences of total defect density and rear emitter parameters (doping concentration and band discontinuity to silicon substrate) on performances of the solar cells are analyzed. The simulated results indicate that the npp~+ cells with acceptor dominated defect states at the rear interface can obtain better performances, and the same for the pnn~+ cells with donor dominated defect states. Moreover, the npp~+ cells are more sensitive to the total interface defect density and its distribution mode due to the unfavorable band offset between the absorber and the rear emitter. But when total defect density is small, the npp~+ cells show more sensitivity to change of the doping concentration at the rear emitter than the pnn~+ cells, and conversely, the pnn~+ cells show more sensitivity to the distribution mode of defect states at the rear emitter than the npp~+ cells. Due to weaker inherent back diffusion ability of minority carrier, the pnn+ cells with moderate band offset (0.25 ～ 0.37 eV) at the rear hetero-junction are more sensitive to the incentive effect of localized charges at the interface formed by asymmetrically distributed defect states, and the interface with donor dominated defect states is a better option for the pnn ~+ cells when the total defect density is relatively small.
机译：通过数值仿真器“用于模拟异质结构的自动机（AFORS-HET）”研究了硅双异质结太阳能电池的性能。在a-Si：H（n）/ c-Si（p）/ a-Si：H（p〜+）和a-Si：中引入了后异质结界面处受体和供体缺陷状态的不对称分布在我们的研究中，H（p）/ c-Si（n）/ a-Si：H（n〜+）结构。分析了总缺陷密度和后发射极参数（掺杂浓度和硅衬底的能带不连续性）对太阳能电池性能的影响。仿真结果表明，在后界面处具有受体占主导的缺陷状态的npp〜+电池可以获得更好的性能，对于具有供体占主导的缺陷状态的pnn〜+电池也具有相同的性能。此外，由于吸收体和后发射极之间的不利带偏移，npp〜+单元对总界面缺陷密度及其分布模式更加敏感。但是当总缺陷密度较小时，npp〜+单元对后发射极的掺杂浓度变化的敏感性比pnn〜+单元高，反之，pnn〜+单元对缺陷的分布方式更敏感状态比npp〜+单元更靠后发射器。由于少数载流子固有的反向扩散能力较弱，在后异质结处具有中等能带偏移（0.25〜0.37 eV）的pnn +细胞对由非对称分布缺陷态形成的界面处的局部电荷的激励作用更为敏感，当总缺陷密度相对较小时，对于pnn〜+细胞，与供体占主导的缺陷状态的界面是更好的选择。

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