Analysis of Reticle Deformation, Reduction Ratio and MEEF of Future Optical Lithography

机译：未来光学光刻的掩模压缩，减少率和MEEF分析

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As a result of aggressive line width shrinking of semiconductor devices in the recent years, the requirements for advanced reticles are getting more and more stringent. Therefore, it is beneficial to consider increasing the reduction ratio of projection optics in order to relax the reticle tolerances. This paper discusses quantitatively the reticle, CD, DOF and overlay accuracy requirement listed in ~2the 1999 International Technology Roadmap for Semiconductor (ITRS) roadmap. Our simulation suggests mask drawing accuracy needs to be further improved for better CD control accuracy. Increasing reduction ratio to 6x is also another way to meet the line wicth requirement. Productivity enhancement with 6x reduction in comparison to 4x reduction ratio is also shown.

机译：由于近年来半导体器件的积极线宽缩小，所指的要求越来越严格。因此，考虑增加投影光学器件的减小率是有益的，以便松弛掩模印刷公分。本文讨论了〜2999国际技术路线图中列出的丝网，CD，DOF和叠加精度要求，为〜299年国际技术路线图。我们的仿真表明，需要进一步提高掩模绘图精度以获得更好的CD控制精度。向6倍的减少比率增加也是符合线WiCth要求的另一种方式。还示出了与4X减少比率相比的6倍降低的生产率提高。

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《Conference on photomask and next-generation lithography mask technology》|2000年||共10页
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作者
Kenichi Kotoku; Koji Mikami; Ryuich Ebinuma; Yuichi Yamada; Yuan Zhang; SPIE-The International Society for Optical Engineering;
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中图分类摄影机具与设备;
关键词
reduction ratio; reticle size; mask error enhancement factor; cost of ownership, chip size; throughput;

机译：减少率;掩模版尺寸;掩模误差增强因子;所有权成本;芯片尺寸;吞吐量;

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Analysis of Reticle Deformation, Reduction Ratio and MEEF of Future Optical Lithography

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