Heating performances of a lamp heater system using halogen lamps were investigated. Good heating performances were obtained for both Cr and half-tone mask even though there was a concern that the heating performances varied when the material of film differed. As a result of controlling the resist temperature with quick response, the temperature uniformity was not only improved but also overshooting of the temperature was reduced. It was possible to realize a different process temperature in each area because films were heated directly, and so the reaction amount of CAR during PEB that is including cooling process of substrate could be even in each pattern area on mask. In addition, this heating method does not influence quartz thickness, so the lamp heater system has the same performance for 9-inch substrate as 6-inch substrate.
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