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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >SILICON THIN FILM SOLAR CELLS BASED ON DIODE LASER CRYSTALLIZATION AND a-Si:H HETERO-EMITTER
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SILICON THIN FILM SOLAR CELLS BASED ON DIODE LASER CRYSTALLIZATION AND a-Si:H HETERO-EMITTER

机译：基于二极管激光晶化和a-Si：H异质发射极的硅薄膜太阳能电池

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We present progress in multicrystalline silicon thin film solar cells on glass substrates with absorbers based on a liquid phase diode laser crystallization process resulting in grains up to 1 mm in size. The grain boundary population is dominated by Σ3 twin grain boundaries that show low recombination strength. Planar devices are prepared by an excimer laser induced epitaxial liquid phase crystallization process forming a homo-junction. An effective light trapping is applied by wet chemical etching of silicon nanowires. The nano-structured samples received an a-Si:H hetero-emitter. By applying the light trapping, short circuit current densities above 30 mA/cm~2 are realized topping the highest values of the planar system by 15%. Nevertheless both, the planar and the nanowire solar cells, yield efficiencies of 10% since the open circuit voltage drops after preparing the nanowires due to the increased surface area.
机译：我们目前在基于液晶二极管激光结晶工艺的吸收剂的玻璃基板上的多晶硅薄膜太阳能电池上的研究进展，该工艺导致晶粒尺寸最大为1 mm。晶界人口以Σ3双晶界为主导，而Σ3双晶界显示出较低的复合强度。通过受激准分子激光诱导的形成同质结的外延液相结晶过程制备平面器件。通过对硅纳米线进行湿化学蚀刻来施加有效的光捕获。纳米结构样品接受了a-Si：H异质发射极。通过使用光阱，可实现30 mA / cm〜2以上的短路电流密度，使平面系统的最高值高出15％。然而，平面的和纳米线的太阳能电池两者都产生了10％的效率，这是因为在制备纳米线之后，由于增加的表面积，开路电压下降了。

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