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Electrical properties and transport mechanisms in Ge-Sb-Te thin films for nanoelectronics

机译:纳米电子Ge-Sb-Te薄膜的电学性质和传输机理

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Electrical, thermal properties, and transport mechanisms in Ge2Sb2Te5 (GST225) thin films were investigated. Crystallization temperature for thin films was estimated. It was established that investigated thin films have p-type conductivity. Temperature dependencies of the resistivity for investigated thin films were studied. Two-channel model of charge carrier transport was used for the modeling of the temperature dependencies of conductivities. Activation energies of conductivity, position of the trap level controlling transport mechanism, and the density of states for this level were estimated.
机译:研究了Ge2Sb2Te5(GST225)薄膜的电学,热学性质和传输机理。估计薄膜的结晶温度。已确定研究的薄膜具有p型导电性。研究了所研究的薄膜的电阻率的温度依赖性。电荷载流子传输的两通道模型用于电导率的温度依赖性建模。估计了电导率的活化能,陷阱能级控制传输机制的位置以及该能级的状态密度。

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