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Enhanced etch process for TSV deep silicon etch

机译：用于TSV和深硅蚀刻的增强蚀刻工艺

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One of the key challenges of deep Si etch is feature control versus high etch rate. Scallop sizes increase with increased etch rate and uniformity degrades. This paper provides an overview of an enhanced rapid alternating process (RAP) in combination with a hardware design that breaks this trade off. Scallop control is achieved through very fast switching of gasses, bias and pressure (up to 10 times faster than the typical Bosch process). This new RAP is combined with a proprietary gas injection architecture to ensure uniformity of depth, both locally and across the wafer, by ensuring uniform dissociation of feedstock. Finally, this paper will show how a robust design has to address the challenges of increased thermal loads which can manifest as etch rate drifts and depth uniformity variations. The result is an increase in TSV throughput by > 200% and a reduction in scallop size by ten-fold.
机译：深度硅蚀刻的关键挑战之一是特征控制与高蚀刻速率。扇贝尺寸随蚀刻速率的增加而增加，均匀性降低。本文概述了增强的快速交替处理（RAP）以及可以打破这种折衷的硬件设计。扇贝控制可通过非常快速地切换气体，偏压和压力来实现（比典型的博世过程快10倍）。这种新的RAP与专有的气体注入架构相结合，可通过确保原料的均匀分解来确保局部和整个晶圆的深度均匀性。最后，本文将展示鲁棒的设计必须如何应对增加的热负荷的挑战，这些挑战可能表现为蚀刻速率漂移和深度均匀性变化。结果是TSV吞吐量增加了200％以上，扇贝大小减小了10倍。

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