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Characterization of Cub2SnSe3 thin films fabricated by coevaporation

机译：共蒸发制备的Cub2SnSe3薄膜的表征

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摘要

CuSnSe (CTSe) thin films were fabricated by coevaporation on soda-tune glass substrates at the substrate temperature of 300 °C under rations Cu/Sn supply ratios. From X-ray diffraction ( XRD) analyses, diffraction peaks of CTSe with a cubic sphalerite structure were observed in all CTSe thin films. In addition, SnSe and SnSe phases were also detected in Sn-ricb CTSe thin films. On the other bands, in Cu-rich CTSe thin films, a CuSe secondary phase was observed by Raman scattering measurements. Surface and cross-sectional observations revealed that these secondary phases were mostly segregated on the surface of the thin films. The electrical properties of CTSe thin films changed strongly by Cu/Sn ratios in the thin films.
机译：CuSnSe（CTSe）薄膜是通过在汽水调节玻璃基板上，在300°C的基板温度下，以Cu / Sn供给比进行共蒸发制备的。通过X射线衍射（XRD）分析，在所有CTSe薄膜中均观察到具有立方闪锌矿结构的CTSe的衍射峰。此外，在Sn-ricb CTSe薄膜中也检测到SnSe和SnSe相。在其他波段上，在富含铜的CTSe薄膜中，通过拉曼散射测量观察到CuSe次级相。表面和横截面观察表明，这些次生相大部分被隔离在薄膜的表面上。 CTSe薄膜的电性能受薄膜中Cu / Sn比的强烈影响。

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