Magneto-electric magnetic tunnel junction based analog circuit options

机译：基于磁电磁隧道结的模拟电路选项

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The magneto-electric magnetic tunnel junction (ME-MTJ) is a voltage controlled beyond CMOS device based on the principle of ME anti-ferromagnetic (AFM) exchange biasing of chromia (Cr₂O₃) and the tunneling magnetoresistance (TMR) of a magnetic tunnel junction (fixed/free ferromagnet (FM) stack). These devices have previously been demonstrated for the implementation of digital logic and memory applications. We here demonstrate their analog capabilities with a variety of analog functions adapted specifically to the characteristics of ME-MTJ - based devices. The novel circuit options proposed in this paper includes a ME-MTJ based analog comparator and the two variations of an 8-level analog-to-digital converter (ADC) using serial and parallel ME-MTJ circuit configurations.

机译：磁电磁隧道结（ME-MTJ）是基于Chromia的抗铁磁性（AFM）交换偏置的原理（Cr _{2 o _{3 ）和磁隧道结（固定式/游离铁磁性（FM）堆叠的隧道磁阻（TMR）。先前已经证明了这些设备用于实现数字逻辑和内存应用程序。我们在这里展示了它们的模拟能力，各种模拟功能专门适用于基于ME-MTJ的设备的特性。本文提出的新型电路选项包括基于ME-MTJ的模拟比较器和8级模数转换器（ADC）的两个变体，使用串行和并行ME-MTJ电路配置。}}

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《IEEE International System-on-Chip Conference》|2017年|386p|共5页
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Nishtha Sharma; Jonathan Bird; Peter Dowben; Andrew Marshall;
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中图分类 TN40-53;
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Magnetic tunneling; Semiconductor device modeling; Transistors; Integrated circuit modeling; Frequency modulation; Hardware design languages; Logic gates;

机译：磁隧道;半导体器件建模;晶体管;集成电路建模;频率调制;硬件设计语言;逻辑门;

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Magneto-electric magnetic tunnel junction based analog circuit options

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