Influence of layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs

机译：布局和工艺参数对InGaP / GaAs HBT热行为的影响

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This paper presents an extensive analysis aimed at quantifying the impact of all the key layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs. The investigation is conducted by resorting to accurate 3-D numerical simulations performed in accordance to the Design Of Experiments technique.

机译：本文提出了一项广泛的分析，旨在量化所有关键布局和技术参数对InGaP / GaAs HBT的热行为的影响。通过诉诸根据“实验设计”技术执行的精确3D数值模拟来进行研究。

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《Conference on Ph.D. Research in Microelectronics and Electronics》|2017年|233-236|共4页
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A. P. Catalano; A. Magnani; V. dAlessandro; L. Codecasa; P. J. Zampardi; B. Moser; N. Rinaldi;
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Finite element analysis; Gallium arsenide; Thermal conductivity; Heterojunction bipolar transistors; Layout; Conductivity; Performance evaluation;

机译：有限元分析砷化镓热导率异质结双极晶体管布局导电性性能评估;

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专利

1. Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs [J] . Sevimli O., Parker A.E., Fattorini A.P., Electron Devices, IEEE Transactions on . 2013,第5期

机译：InGaP / GaAs HBT中热行为的测量和建模
2. Analytical Design Method for a Low-Distortion Microwave InGaP/GaAs HBT Amplifier Based on Transient Thermal Behavior in a GaAs Substrate [J] . Ishikawa R., Kimura J., Honjo K. Components, Packaging and Manufacturing Technology, IEEE Transactions on . 2013,第10期

机译：GaAs衬底中基于瞬态热行为的低失真微波InGaP / GaAs HBT放大器的解析设计方法
3. Ameliorated Thermal Performance of n-p-n and p-n-p GaAs/InGaAs/InGaP Collector-Up HBTs [J] . Tseng H.-C., Hwang S.-J., Chu C.-Y. Electron Devices, IEEE Transactions on . 2012,第10期

机译：n-p-n和p-n-p GaAs / InGaAs / InGaP集电极上HBT的改善的热性能
4. Influence of layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs [C] . A. P. Catalano, A. Magnani, V. dAlessandro, Conference on Ph.D. Research in Microelectronics and Electronics . 2017

机译：布局和技术参数对InGaP / GaAs Hbts热行为的影响
5. Strain-balanced InGaP/InGaP multiple quantum well electroabsorption modulators on GaP and GaAsP. [D] . Vogt, Timothy Jon. 1997

机译：GaP和GaAsP上的应变平衡InGaP / InGaP多量子阱电吸收调制器。
6. Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure [O] . Chen-Chen Chung, Binh Tinh Tran, Kung-Liang Lin, 2014

机译：水热沉积ZnO纳米管结构提高InGaP / GaAs / Ge太阳能电池的效率
7. Analysis of Electrothermal Effects in Devices and Arrays in InGaP/GaAs HBT Technology [O] . Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, 2021

机译：InGaP / GaAs HBT技术在设备和阵列中电热效应分析

Influence of layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs

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