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首页> 外文会议>Symposium on GaN and related alloys >Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor
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Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor

机译：在生产模型多晶片MOVPE反应器上生长的InGaN / GaN发光二极管的接触电阻

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We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 a /40A) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on rho-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500 degree yield the lowest specific contact resistance r sub c (0.016 omega- cm sup 2 at a current density of 66.7 mA/cm). Based on the extracted r sub c from the transmission line measurement, we estimate that the contact resistance of the rho-type GaN accounts for -88
机译：我们报告了使用多晶片MOVPE反应器在蓝宝石衬底上生长的InGaN / GaN单量子阱LED的器件制造和表征。为了改善LED的电流扩散，开发了一种自对准工艺来定义LED台面，该台面已涂覆了一层薄的半透明Ni / Au（40 a / 40A）层。在传输线测试结构上对Ni / Cr / Au在rho-GaN上的欧姆接触电阻与退火温度的关系进行了详细研究。发现在300至500度之间的退火温度产生最低的比接触电阻r sub c（在66.7mA / cm 2的电流密度下为0.016Ω-cmsup 2）。根据从传输线测量中提取的r sub c，我们估计rho型GaN的接触电阻约为-88

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