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首页> 外文会议>International symposium on photomask technology;Conference on photomask technology >Effects of Heated Substrates on Bimetallic Thermal Resist for Lithography and Grayscale Photomask Applications
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Effects of Heated Substrates on Bimetallic Thermal Resist for Lithography and Grayscale Photomask Applications

机译：加热基板对光刻和灰度光掩膜应用中双金属热阻的影响

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Bimetallic thin-films of Bi/In act as negative thermal resists when laser exposure pulse (7mJ/sq. cm for 4 nsec) converts the film into a transparent eutectic metallic oxide alloy. Resist transparency varies with exposed laser power, changing from <0.1% (3.0 OD) unexposed to >60% (0.22 OD) exposed. This generates direct-write gray scale photomasks, and adding a feedback system where the transparency is measured and adjusts the writing process to account for local variations in the film, achieves >64 gray level control. These resists are also wavelength invariant, operating from visible to EUV with a resolution >42nm after development using a diluted RCA-2 solution (HCl:H_2O_2:H_20 @ 1:1:48) with a gamma of 2-18. Longer duration exposures with lower instantaneous intensities result in lower gammas, while shorter exposures with higher energies give higher gammas. One limitation on these resists is that the exposure energy must be delivered in a single pulse. This limitation puts pulse energy requirements into the mJ per pulse range: greater than desired for EUV exposure systems. Bimetallic thermal resists remain almost unaffected during a sub-threshold exposure that does not reach the activation energy. It has been shown that the resist and substrate can be heated below the threshold energy, to temperatures of at least 90°C, without creating any exposure of the resist. In this research, Bi/In resists are heated through a range of substrate temperatures, measured for their optical exposure requirements and gammas under these conditions, and used to determine if substrate heating can improve the film's sensitivity.
机译：当激光曝光脉冲（7MJ / SQ.CM 4 NSEC）将薄膜转化为透明共晶金属氧化物合金时，Bi / In的双薄膜用作负热抗蚀剂。抗蚀剂透明度随暴露的激光功率而变化，从未曝光的<0.1％（3.0个OD）（0.22 od）暴露而变化。这产生了直接写入灰度光标，并添加了测量透明度的反馈系统，并调整写入过程以考虑薄膜的局部变化，实现> 64灰度控制。这些抗蚀剂也是波长不变，在使用稀释的RCA-2溶液（HCl：H_2O_2：H_20 @ 1：1：1：1：48）的显影后，从Auv的可见率和达到的分辨率> 42nm进行操作。较长的瞬时强度较长的持续时间曝光导致较低的伽玛，而具有更高的能量的较短曝光给出更高的伽马。对这些抗蚀剂的一个限制是曝光能量必须以单个脉冲输送。该限制将脉冲能量要求对每个脉冲范围的MJ表示：大于EUV曝光系统的所需。在不达到激活能量的子阈值暴露期间，双金属热抗蚀剂仍然不受影响。已经表明，抗蚀剂和基板可以在阈值能量低于阈值能量，至至少90℃的温度，而不产生任何抗蚀剂的抗蚀剂。在该研究中，Bi / In抗蚀剂通过一系列基板温度加热，在这些条件下测量其光学暴露要求和伽马酸，并用于确定基板加热是否可以提高薄膜的敏感性。

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