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首页> 外文会议>Electronic Components and Technology Conference >The electromigration and thermomigration behaviors of Pb-free flip chip Sn-3Ag-0.5Cu solder bumps
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The electromigration and thermomigration behaviors of Pb-free flip chip Sn-3Ag-0.5Cu solder bumps

机译：无铅倒装芯片SN-3AG-0.5CU焊料凸块的电迁移和热迁移行为

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The electromigration and thermomigration behaviors of Pb-free flip chip Sn-3Ag-0.5Cu solder bumps, with UBM (under bump metals) layers Al (0.3/spl mu/m)/Ni(V) (0.3/spl mu/m)/Cu (0.5 /spl mu/m) layers, upon current stressing at 120/spl deg/C were investigated. The current density applied was 1.18/spl times/10/sup 4/A/cm/sup 2/ for all investigations. To investigate the change of morphology and composition in the bulk of solder bumps and the IMC layers at the interface between the UBM and solder, the solder bumps were examined at specified period of current stressing using SEM (scanning electron microscope), EDX (energy dispersive X-ray spectroscopy) and WDS (wave dispersive X-ray spectroscopy). There exists a thermal gradient between cathode and anode. The synergism effect of electromigration and thermomigration accelerated the growth and propagation of voids at the cathode. Voids formed on the Al trace/solder interface regardless of the direction of electron flow. Voids also formed at the interface even though the current flowed along the Al trace. Thermomigration overwhelms electromigration and results in mass diffusion when counter flow of electron and thermal gradient exists. The evidence of mass transfer was further confirmed by the mass analysis throughout the bump and the hillock appeared at the lower portion of the bump. The formation of intermetallic compound at the substrate side (metallized with Cu/Ni-P/Au) was suppressed when the electron flow and thermal gradient were in the opposite direction. The solder mass was forced to migrate to the substrate when the current flowed toward the substrate or along the Al trace. In order to illustrate the importance of heat dissipation, a set of joints were stressed with current at an environmental temperature of -5/spl deg/C. The comparison between the as produced bump and current stressed bump indicated that no visible defect exists either at the cathode or at the anode even after 600 hours. These observations further emphasized the significance of heat dissipation in reducing the migration defect.
机译：具有UBM（沿凸块金属下）Al（0.3 / SPL MU / M）/ Ni（V）（0.3 / SPL mu / m）（0.3 / spl mu / m）（0.3 / spl mu / m）（0.3 / spl mu / m）（0.3 / spl mu / m） / Cu（0.5 / SPL mu / m）层，在进行120 / spl eg / c时的电流应力时。所施加的电流密度为1.18 / SPL时/ 10 / sup 4 / A / cm / sup 2 /用于所有调查。为了研究在UBM和焊料之间的界面中的大量焊料凸块和IMC层中的形态和组合物的变化，使用SEM（扫描电子显微镜），EDX（能量分散）在特定的电流应力的定时检查焊料凸块。 X射线光谱）和WDS（波分散X射线光谱）。阴极和阳极之间存在热梯度。电迁移和热迁移的协同作用加速了阴极空隙的生长和繁殖。无论电子流方向如何，在Al痕迹/焊接界面上形成的空隙。即使电流沿着Al痕迹流动，也在界面处形成空隙。当存在电子和热梯度的计数器时，热迁移越来越多的电迁移并导致质量扩散。通过整个凸块的质量分析进一步证实了传质的证据，并在凸块的下部出现了小丘。当电子流量和热梯度呈相反方向时，抑制了基板侧的金属间化合物（用Cu / Ni-P / Au金属化）。当电流朝向基材或沿Al痕迹流动时，焊料质量被迫迁移到基板上。为了说明散热的重要性，在-5 / SPL DEG / C的环境温度下电流胁迫一组接头。所产生的凸块和电流应力凸块之间的比较表明，即使在600小时后也没有在阴极或阳极处存在可见的缺陷。这些观察结果进一步强调了散热在减少迁移缺陷方面的重要性。

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