Deposition and characterization of Schottky and Ohmic contacts on n-type alpha (6H)SiC (0001)

机译：N型α（6H）SiC上肖特基和欧姆触点的沉积和表征SiC（0001）

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The electrical behavior and the interfacial chemistry and microstructure have been determined for the Ti, Pt, Hf, and Co/6H-SiC systems. Deposited in their pure form onto unheated, n-type, chemically-cleaned substrates via UHV electron beam evaporation, the metals formed excellent rectifying contacts with ideality factors below 1.1 and leakage currents as low as 2× 10~(-8 )A/cm~2 at -10 V. Titanium, Pt, and Hf remained rectifying after annealing at 700 - 750°C; Co became ohmic-like after heating to 1000°C. Substantial inter-diffusion and phase evolution occurred at each metal/SiC interface during the anneals.

机译：用于Ti，Pt，HF和Co / 6H-SiC系统确定了电力行为和界面化学和微观结构。通过UHV电子束蒸发将其纯净的形式沉积在未加热的N型化学清洁的基板上，金属形成优异的整流触点，与低于1.1的理想因子，漏电流低至2×10〜（-8）A / cm在-10 V.钛，Pt和Hf在700-750°C的退火后保持整流;在加热至1000°C后，CO变得欧姆。在退火期间的每个金属/ SIC界面处发生大量的扩散和相位演化。

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《International conference on SiC and related materials》|1994年||共4页
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中图分类硅酸盐工业;
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1. Thermally stable, low specific resistance (1.30 x 10~(-5) Ω cm~2) TiC Ohmic contacts to n-type 6Hα-SiC [J] . A. K. Chaddha, J. D. Parsons, G. B. Kruaval Applied Physics Letters . 1995,第6期

机译：热稳定，低电阻率（1.30 x 10〜（-5）Ωcm〜2）TiC欧姆接触n型6Hα-SiC
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3. Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts [J] . Jung-Chien Cheng, Bing-Yue Tsui Electron Devices, IEEE Transactions on . 2018,第9期

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4. Deposition and characterization of Schottky and Ohmic contacts on n-type alpha (6H)SiC (0001) [C] . International conference on SiC and related materials . 1994

机译：N型α（6H）SiC上肖特基和欧姆触点的沉积和表征SiC（0001）
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机译：n型4H-siC上W肖特基接触电子束沉积过程中引入缺陷的电学特性

Deposition and characterization of Schottky and Ohmic contacts on n-type alpha (6H)SiC (0001)

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