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Optical Properties of InAs/lnP Planar Quantum Dot Microcavities

机译:INAS / LNP平面量子点微胶囊的光学性质

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Planar InAs/InP quantum dot microcavities using multi-layer SiO_2/Ta_2O_5 Bragg reflectors have been studied in emission. The spectra exhibit collection optics-limited cavity linewidths of ~1meV with the occasional ~200μeV single-dot emission. Measurements as a function of incident power show quantum dot saturation behavior, with transfer of oscillator strength to the wetting layer outside the cavity stop band. Saturation behavior at fixed pump power is also observed as a function of decreasing temperature. Dispersion measurements as a function of emission angle show polarization splitting in qualitative agreement with theory.
机译:使用多层SiO_2 / TA_2O_5布拉格反射器的平面INAS / INP量子点微胶囊已经在发射中进行了研究。光谱展示收集光学有限的腔宽度为〜1mev,偶尔为〜200μEV单点排放。测量作为入射功率的函数,显示了量子点饱和度行为,随着振荡器强度的转移到腔挡槽外的润湿层。还观察到固定泵功率的饱和行为作为温度降低的函数。分散测量作为发射角度显示与理论的定性协议中的偏振分裂的函数。

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