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首页> 外文会议>International conference on molecular beam epitaxy >Nucleation and growth of ZnO on (1 1 20) sapphire substrates using molecular beam epitaxy
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Nucleation and growth of ZnO on (1 1 20) sapphire substrates using molecular beam epitaxy

机译：使用分子束外延的ZnO对（112）蓝宝石基材的成核和生长

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It has been recently demonstrated that it is possible to eliminate 30?rotation twins in c-oriented epitaxial ZnO films by growing on the (1 1 2 0) face of sapphire despite the apparent symmetry mismatch between the (6-fold) epilayer and the (2-fold) substrate. To further elucidate the details of the growth process, we have investigated the initial stages of growth of ZnO on (1 1 20) sapphire using molecular beam epitaxy. Films of approximately 3, 5, 8, 10, 20, 100, and 600 nm thickness were investigated by in situ reflection high-energy diffraction, high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and extended X-ray absorption (XAFS). XAFS indicates that there is no discernible change in nearest-neighbor distance with film thickness. On the other hand, HRXRD measurements indicate an ～1% increase in the c-lattice constant with decreasing film thickness. XAFS measurements of the second nearest-neighbor structural disorder were observed to increase sharply for the thinnest films implying that distortion of bond angles is responsible for the increase in the c-axis observed by HRXRD. HRXRD reciprocal area maps of the symmetric ZnO (0002) reflection indicate the onset of diffuse scattering from 20 nm, while AFM indicates a concurrent change in surface morphology suggesting a change in the growth process for t >～ 20 nm.
机译：近来已经证实，有可能通过尽管（6倍）外延层和之间的明显对称失配的（1 1 2 0）面蓝宝石的生长，以消除在C-取向外延ZnO薄膜30？旋转孪生（2倍）衬底。为了进一步阐明的生长过程的细节，我们已经调查上使用分子束外延（11 20）的ZnO蓝宝石生长的初始阶段。大约膜3，5，8，10，20，100，和600米纳米厚采用原位反射高能衍射，高分辨率的X射线衍射（HRXRD），原子力显微镜（AFM），调查和扩展X射线吸收（XAFS）。 XAFS表示有在最近相邻距离与膜厚没有可辨别的变化。在另一方面，HRXRD测量指示在随薄膜厚度的c晶格常数增加〜1％。观察到第二最近邻结构紊乱的XAFS测量为最薄的膜暗示键的畸变角急剧增加是负责在增加C轴由HRXRD观察。对称的ZnO HRXRD倒数区域地图（0002）反射表明为20nm漫散射的发作，而AFM表示表面形态暗示在对于t>〜20nm的生长过程中的变化的变化并发。

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