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Carbon Nanotube Vias for Multilevel Interconnects Using CMP Techniques

机译:用于使用CMP技术的多级互连的碳纳米管通孔

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We have developed carbon nanotube (CNT) vias using thermal chemical vapor deposition (CVD) at a growth temperature of 450 deg C with cobalt catalysts,titanium carbide ohmic contacts,and tantalum barrier layers on copper wiring.The total resistance of the CNT via comprised of about 1,000 tubes,was three orders of magnitude lower than that of one CNT,indicating that the current flows in parallel,through the tubes.We have also demonstrated a mechanical polishing technique for CNT vias.The 1-mu m-high out-projecting CNTs were polished using a diamond slurry of 30-mu m-diameter particles mixed in oil at pressures below 18 kPa.Because the adhesion strength of the CNTs was about 5.5 MPa,the CNT vias were able to withstand the mechanical stress applied during the polishing process.
机译:在铜布线上使用钴催化剂,碳化钛欧姆触点和钽阻挡层的生长温度,在450℃的生长温度下使用热化学气相沉积(CNT)通过碳纳米管(CNT)通孔开发出碳纳米管(CNT)的通孔。CNT通孔的总阻力大约1,000个管是比一个CNT的三个数量级,表明电流并联流过管。我们还证明了CNT通孔的机械抛光技术。1-MU M-HIGH OUT-使用30μmM直径颗粒的金刚石浆料抛光抛光CNT,该颗粒在18kPa的压力下混合。因为CNT的粘合强度约为5.5MPa,CNT通孔能够承受在施加期间施加的机械应力抛光过程。

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