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首页> 外文会议>Application of Accelerators in Research and Industry International Conference >Positron Annihilation Induced Auger Electron Spectroscopic Studies Of Reconstructed Semiconductor Surfaces
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Positron Annihilation Induced Auger Electron Spectroscopic Studies Of Reconstructed Semiconductor Surfaces

机译：正电子湮没诱导螺旋钻电子的重建半导体表面的电子光谱研究

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The positron annihilation induced Auger spectrum from GaAs(100) displays six As and three Ga Auger peaks below 110 eV corresponding to M_(4,5)VV, M_(2)M_(4)V, M_(2,3)M_(4,5)M_(4,5) Auger transitions for As and M_(2,3)M_(4,5)M_(4,5) Auger transitions for Ga. The integrated Auger peak intensities have been used to obtain experimental annihilation probabilities of surface trapped positrons with As 3p and 3d and Ga 3p core level electrons. PAES data is analyzed by performing calculations of positron surface and bulk states and annihilation characteristics of surface trapped positrons with relevant Ga and As core level electrons for both Ga- and As-rich (100) surfaces of GaAs, ideally terminated, non-reconstructed and with (2X8), (2X4), and (4X4) reconstructions. The orientation-dependent variations of the atomic and electron densities associated with reconstructions are found to affect localization of the positron wave function at the surface. Computed positron binding energy, work function, and annihilation characteristics demonstrate their sensitivity both to chemical composition and atomic structure of the topmost layers of the surface. Theoretical annihilation probabilities of surface trapped positrons with As 3d, 3p, and Ga 3p core level electrons are compared with the ones estimated from the measured Auger peak intensities.
机译：来自GaAs（100）的正电子湮没诱导座座螺旋谱显示在110eV以下对应于M_（4,5）VV，M_（2）M_（4）V，M_（2,3）M_（ 4,5）M_（4,5）螺旋钻的转换为M_（2,3）M_（4,5）M_（4,5）M_（4,5）螺旋钻过渡的Ga。集成螺旋座峰值强度已被用于获得实验湮灭用作3P和3D和GA 3P芯电平电子的表面捕获的正弦概率。通过在GaAs的GA和AS的GA和AS的富含GA和作为核心电平电子的表面被捕获的积分的计算和锚固特性的计算来分析PAES数据，以及GaAs的GA和富含（100），理想地终止，非重建和具有（2x8），（2x4）和（4x4）重建。发现与重建相关的原子和电子密度的取向依赖性变化影响表面上的正电子波函数的定位。计算的正电子结合能量，功函数和湮灭特性证明了它们对表面上最顶层的化学成分和原子结构的敏感性。将表面被捕获的正弦的理论湮灭概率与3D，3P和GA 3P核心电平电子进行了比较，与测量的螺旋峰峰值强度估计。

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