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首页> 外文会议>Symposium on nitride semiconductors >DISLOCATION DISTRIBUTION AND SUBGRAIN STRUCTURE OF GaN FILMS DEPOSITED ON SAPPHIRE BY HVPE AND MOVPE
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DISLOCATION DISTRIBUTION AND SUBGRAIN STRUCTURE OF GaN FILMS DEPOSITED ON SAPPHIRE BY HVPE AND MOVPE

机译：HVPE和MOVPE沉积在蓝宝石上的GaN薄膜的脱位分布和粒子结构

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Transmission electron microscopy (TEM) was used to characterize the microstructure in GaN films deposited by two different methods. An 11 μm thick film was deposited directly on a sapphire substrate by HVPE; an 8 μm thick film was deposited on a 15 nm buffer layer of AlN on sapphire by MOVPE. The dislocation densities in the top layer of the HVPE and MOVPE ilms were～10~9 cm~(-2) and～5 × 10~9 cm~(-2) respectively. In the HVPE film this was almost exclusively threading dislocations (TDs), ～70% of which had edge character. In addition to the TDs, the MOVPE sample also contained an appreciable number of dislocations lying in the basal plane. The microstructure of each film was dominated by a subgrain structure of slightly misoriented cells. In the MOVPE specimen, approximately 90% of the TDs were associated with subgrain walls, whereas only approximately 75% of the dislocations in the HVPE specimen were associated with walls. Both the HVPE and MOVPE samples experienced 40% coarsening of the cells through the thickness of the film. The subgrains of the MOVPE sample were 75% smaller than those in the HVPE sample (350 and 1300 nm, respectively). The average dislocation spacing in the walls was 50% smaller in the MOVPE sample than in the HVPE sample (82 and 180 nm, respectively).
机译：透射电子显微镜（TEM）用于表征两种不同方法沉积的GaN膜的微观结构。通过HVPE将11μm厚的薄膜直接沉积在蓝宝石底物上;通过MOVPE在蓝宝石上的15nm缓冲膜上沉积了8μm厚的薄膜。 HVPE和MOVPE ILMS顶层的位错密度分别为10〜9cm〜（-2）和~~5×10〜9cm〜（-2）。在HVPE薄膜中，这几乎完全是线程的错位（TDS），其中〜70％有边缘角色。除了TDS之外，MOVPE样品还包含了位于基面上的可观数量的脱位。每种膜的微观结构由稍微有错误细胞的粒结构主导。在MOVPE样本中，大约90％的TDS与粒壁有关，而只有大约75％的HVPE样本中的脱位与壁有关。 HVPE和MOVPE样品都通过薄膜的厚度经历了40％的细胞粗化。 MOVPE样品的亚甲基比HVPE样品（分别为350和1300nm）小75％。在MOVPE样品中，壁中的平均位错间距比HVPE样品（分别为82和180nm）更小50％。

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