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High k gate dielectrics for Si and compound semiconductors by molecular beam epitaxy

机译：通过分子束外延的Si和化合物半导体的高k栅极电介质

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The ability of controlling the growth and interfaces of ultrathin dielectric films on Si and compound semiconductors by ultrahigh vacuum physical vapor deposition has led to comprehensive studies of gate stacks employing the high k gate oxide Ga{sub}2O{sub}3(Gd{sub}2O{sub}3), and the rare earth oxides Gd{sub}2O{sub}3 and Y{sub}2O{sub}3. The epitaxy and the interfaces of Gd{sub}2O{sub}3 on GaAs. GaN, and Si were characterized with atomic precision, and show strong tendency to conform to the underlying substrate, thus providing insight into the fundamental mechanism for low interfacial state density and effective passivation of GaAs and GaN surfaces. These Gd{sub}2O{sub}3 and Y{sub}2O{sub}3 gate stacks of abrupt interfaces and controlled microstructures were employed as a model system to elucidate critical issues of materials integration in CMOS scaling.
机译：通过超高真空物理气相沉积控制超薄介电膜的生长和界面的能力导致了采用高k栅极氧化物Ga {sub} 2的栅极堆叠的综合研究（Gd {sub 2o {sub} 3），稀土氧化物gd {sub} 2o {sub} 3和y {sub} 2o {sub} 3。 GaAs上GD {Sub} 2o {sub} 3的外延和界面。 GaN和Si以原子精度为特征，并且表现出强烈的符合底层基材的倾向，从而了解了对低界面状态密度的基本机制和GaAs和GaN表面的有效钝化的洞察力。这些GD {sub} 2o {sub} 3和y {sub} 2o {sub} 3突然接口和控制微结构的栅极堆叠作为模型系统，以阐明CMOS缩放中的材料集成的关键问题。

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