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首页> 外文会议>Materials Research Society Symposium >Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO_2 Thin Films
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Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO_2 Thin Films

机译：前体性质对MOCVD ZRO_2薄膜结晶度和微观结构的影响

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In the present work,we report the deposition of zirconia thin films on Si(100) at various substrate temperatures by low-pressure metalorganic chemical vapor deposition (MOCVD).Three different zirconium complexes,viz.,tetrakis(2,4-pentadionato)zirconium(IV),[Zr(pd)4],tetrakis(2,2,6,6-tetramethyl-3,5-heptadionato )zirconium(IV),[Zr(thd)_4],and tetrakis( t-butyl-3-oxo-butanoato)zirconium(IV),[Zr(tbob)_4] are used as precursors.The relationship between the molecular structures of the precursors and their thermal properties,as examined by TG/DT A is presented.The films deposited using these precursors have distinctly different morphology,though all of them are of the cubic phase.The films grown from Zr(thd)_4 are well crystallized,showing faceted growth at 575 deg C,whereas the films grown from Zr(pd)_4 and Zr(tbob)_4 are not well crystallized,and display cracks.These differences in the observed microstructure may be attributed to the different chemical decomposition pathways of the precursors during the film growth,which influence the nucleation and the growth processes.This is also evidenced by the different kinetics of growth from these three precursors under otherwise identical CVD conditions.The details of thin film deposition,and film microstructure analysis by XRD and SEM is presented.The dielectric behavior of the films deposited from different precursors,as studied by C-V measurements,are compared.
机译：在目前的工作中，我们在不同的衬底温度下通过低压有机金属化学气相沉积氧化锆报告薄膜在Si（100）的沉积（MOCVD）。三不同锆络合物，即，四（2,4-戊二酮）锆（IV），[Zr的（PD）4]，四（2,2,6,6-四甲基-3,5- heptadionato）合锆（IV），[Zr的（THD）_4]和四（叔丁基-3-氧代 - butanoato）合锆（IV），[锆（tbob）_4]被用作前体的分子结构及其热性能之间关系precursors.The，通过TG / DT A作为检查是presented.The膜使用这些前体具有明显不同的形态，虽然它们都是由Zr（THD）生长的立方相，膜的沉积_4是公结晶，示出在575摄氏度方位生长，而由Zr（PD）生长的膜_4和Zr（tbob）_4不能很好结晶，并显示在所观察到的微观结构cracks.These差异可能归因于precurs的不同化学分解途径膜生长期间ORS，其影响成核和生长processes.This也通过由X射线衍射和SEM的不同动力学从下薄膜沉积的其它方面相同的CVD conditions.The细节这三个前体生长，膜的微结构分析的证明是作为研究了CV测量从不同的前体沉积的膜的介电presented.The行为，进行了比较。

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