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首页> 外文会议>Conference on device and process technologies for MEMS, microelectronics, and photonics >Novel low temperature CMOS compatible full wafer bonding process for the fabrication of 3D embedded microchannels using SU-8
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Novel low temperature CMOS compatible full wafer bonding process for the fabrication of 3D embedded microchannels using SU-8

机译：新颖的低温CMOS兼容全晶片粘接工艺，用于使用SU-8制造3D嵌入式微通道的制造

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This article describes a novel low temperature full wafer adhesive bonding process to fabricate three-dimensional (3-D) embedded microchannels using SU-8 photoresist as structural material. The technology development includes an improvement of the SU-8 photolithography process in order to produce high uniformity films using Taguchi methodology. After that, 3-D embedded microchannels are fabricated by a low temperature adhesive bonding of the SU-8 thick-films. The process parameters have been chosen in order to achieve a strong and void-free bond. Different examples using this new technology are shown, including bonding between Silicon, Pyrex and combinations of them, in order to obtain 3-D interconnected microchannels between the wafers. Microchannels with vertical smooth walls and aspect ratios up to five have been obtained. Channels depth from 40 to 60 μm and 10 to 250μm width have been achieved. Liquid has been introduced into the channels verifying a good sealing of the 3-D microchannels. The fabrication procedure described in this article is fast, reproducible, CMOS compatible and easily implemented using standard photolithography and bonding equipment.
机译：本文介绍了一种新型低温全晶片粘合剂粘合工艺，用于制造使用SU-8光刻胶作为结构材料的三维（3-D）嵌入的微通道。技术开发包括使用Taguchi方法产生高均匀性薄膜的SU-8光刻工艺的改进。之后，通过SU-8厚膜的低温粘合剂粘合来制造3-D嵌入的微通道。选择了工艺参数，以达到无空隙键。示出了使用这种新技术的不同示例，包括硅，Pyrex和它们的组合之间的粘合，以便在晶片之间获得3-D互连的微通道。已经获得了具有垂直光滑墙和最多五个宽度比的微通道。已经实现了40至60μm和10至250μm宽度的通道深度。已经将液体引入验证3-D微通道的良好密封的通道中。本文中描述的制造过程快速，可再现，CMOS兼容，并且使用标准光刻和粘合设备容易地实现。

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