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首页> 外文会议>Symposium on Amorphous and Nanocrystalline Silicon Science and Technology >Identification of Possible Bonding Sites for Post Deposition Oxygen Absorption in Microcrystalline Silicon
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Identification of Possible Bonding Sites for Post Deposition Oxygen Absorption in Microcrystalline Silicon

机译：鉴定微晶硅中沉积氧吸收的可能粘合位点

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Using infrared (IR) spectroscopy and x-ray diffraction, the nature of the grain boundaries in two μc-Si films deposited by hot wire CVD, displaying similar crystalline volume fractions but very different behavior upon exposure to atmospheric contaminants, is analyzed. For the film exhibiting significant post deposition oxidation, the IR spectrum in the 2100 cm~(-1) Si-H stretch mode region contains two sharp and very narrow peaks, suggesting that the crystallites have been incorporated into the μc-Si films with their hydrogenated surfaces relatively intact. By comparing these peak frequencies to those in the literature for Si-H bonding on c-Si surfaces, we identify certain crystallite orientations which, when comprising the μc-Si grain boundaries, are particularly susceptible to oxidation. We further suggest that the distribution of H in this grain boundary/crystallite surface region is crucial for depositing μc-Si films with good electronic properties and minimal post deposition oxidation.
机译：使用红外（IR）光谱和X射线衍射，分析了通过热线CVD沉积的两个μC-Si膜中的晶界性质，显示出类似的结晶体积分数但在暴露于大气污染物时具有非常不同的行为。对于表现出显着沉积氧化的薄膜，2100cm〜（-1）Si-H拉伸模式区域中的IR光谱含有两个尖锐且非常窄的峰，表明结晶物已与其掺入μC-Si薄膜中氢化表面相对完整。通过将这些峰值频率与在C-Si表面上的Si-H键合的那些中，我们鉴定了某种微晶取向，当包含μC-Si晶粒边界时，特别易于氧化。我们进一步建议，该晶界/微晶表面区域中H的分布对于沉积具有良好电子性质和最小沉积氧化氧化的μC-Si膜是至关重要的。

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