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首页> 外文会议>Symposium Proceedings vol.808; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2004; 20040413-16; San Francisco,CA(US) >Identification of Possible Bonding Sites for Post Deposition Oxygen Absorption in Microcrystalline Silicon
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Identification of Possible Bonding Sites for Post Deposition Oxygen Absorption in Microcrystalline Silicon

机译：确定微晶硅中沉积后氧吸收的可能结合位点

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摘要

Using infrared (IR) spectroscopy and x-ray diffraction, the nature of the grain boundaries in two μc-Si films deposited by hot wire CVD, displaying similar crystalline volume fractions but very different behavior upon exposure to atmospheric contaminants, is analyzed. For the film exhibiting significant post deposition oxidation, the IR spectrum in the 2100 cm~(-1) Si-H stretch mode region contains two sharp and very narrow peaks, suggesting that the crystallites have been incorporated into the μc-Si films with their hydrogenated surfaces relatively intact. By comparing these peak frequencies to those in the literature for Si-H bonding on c-Si surfaces, we identify certain crystallite orientations which, when comprising the μc-Si grain boundaries, are particularly susceptible to oxidation. We further suggest that the distribution of H in this grain boundary/crystallite surface region is crucial for depositing μc-Si films with good electronic properties and minimal post deposition oxidation.
机译：使用红外（IR）光谱和X射线衍射，分析了通过热线CVD沉积的两片μc-Si膜的晶界性质，显示出相似的晶体体积分数，但暴露于大气污染物后的行为却大不相同。对于显示出显着的沉积后氧化的薄膜，在2100 cm〜（-1）Si-H拉伸模式区域中的红外光谱包含两个尖锐且非常窄的峰，这表明微晶已经与微晶硅膜结合在一起。氢化表面相对完整。通过将这些峰值频率与文献中用于c-Si表面Si-H键合的峰值频率进行比较，我们确定了某些微晶取向，这些取向在包含μc-Si晶界时特别容易被氧化。我们进一步建议，H在此晶界/微晶表面区域的分布对于沉积具有良好电子性能且最小化后沉积氧化的μc-Si膜至关重要。

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