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Influence of ion bombardment of sapphire on electrical property of GaN layer

机译：蓝宝石离子轰击对GaN层电特性的影响

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Ion beam bombardment of proton, He~+, Ar~+, Xe~+ ions were made on single crystal substrate by cyclotron. The GaN epi-layer material was grown by MOCVD on ion beam bombarded substrate. After deposition of GaN epi-layer heat treatment was made in flow of N_2. The RMS roughness of the substrate was increased by ion bombardment. The GaN crystal quality for substrates of ion bombardment was better than that for bare substrates. Raman spectrum analysis indicated the induced stress in the GaN epi-layer during the heat treatment. The electrical property of GaN was improved after heat treatment. It is estimated that ion bombardment of proton with current of 1 uA is the optimum condition in our experimental condition.
机译：通过回旋加速器在单晶基板上制造定位的离子束轰击，He〜+，Ar〜+，Xe〜+离子。 GaN ePI层材料在离子束上轰击底物的MOCVD生长。在沉积GaN外延层热处理之后，在N_2的流动中进行。通过离子轰击增加基材的RMS粗糙度。离子轰击基板的GaN晶体质量优于裸基板的底板。拉曼光谱分析表明热处理期间GaN外延层中的诱导应力。热处理后GaN的电特性得到改善。据估计，具有1个UA电流的质子的离子轰击是我们实验条件下的最佳条件。

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