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Effect of substrate temperature on structural and optical properties of ZnO:Co thin films fabricated by laser molecular beam epitaxy

机译:基材温度对激光分子束外延制造的ZnO:CO薄膜结构和光学性能的影响

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We synthesized ZnO:Co thin films on sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) method. X-ray diffraction (XRD) spectra indicated that all samples possessed wurtzite structure with the preferential c-axis-orientation and the value of the c-axis lattice decreased with increasing substrate temperature. UV-vis transmittance spectra and X-ray photoelectron spectroscopy (XPS) implied that Co~(2+) ions incorporated into ZnO lattice with substitution for Zn~(2+) ions and the non-bivalent Zn existed in as-prepared thin films. Two emission bands located at 418 nm (2.97 eV) and 490 nm (2.53 eV) were observed from the photoluminescence (PL) spectra of all samples. The two emission bands were in relation to Zn interstitials and the complex of Vo and Zn_1 (VoZn_1). The quantity of the Zn interstitials remained mostly invariable as substrate temperature increased.
机译:通过激光分子束外延(LMBE)方法,我们在蓝宝石(0001)衬底上合成ZnO:Co薄膜。 X射线衍射(XRD)光谱表明,所有样品都具有优先的C轴取向的紫立岩结构,并且C轴晶格的值随着基板温度的增加而降低。 UV-Vis透射光谱和X射线光电子能谱(XPS)暗示掺入ZnO晶格中的CO〜(2+)离子与Zn〜(2+)离子的取代,并且在制备的薄膜中存在非二价Zn 。从所有样品的光致发光(PL)光谱,观察到位于418nm(2.97eV)和490nm(2.53eV)的两个发射带。两个发射带与Zn间质和Vo和Zn_1(Vozn_1)相关。随着基板温度的增加,Zn间质量的数量仍然是不变的。

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