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Origin Mechanism of Residual Stresses in Porous Silicon Film

机译：多孔硅膜中残余应力的产生机理

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In this article, a metallographic microscopy, an atomic force microscopy and a field emitting scanning electronic microscopy was used to investigate the surface and the cross-sectional morphology of porous silicon films, respectively. Simple micro-structure and micro-mechanical models are established to explain the origin mechanism of residual stresses in the porous silicon. Experimental results reveal that the residual stresses have close relation with the micro-structure of the porous silicon and consist of the lattice mismatch stress, capillary stress, oxidation stress, Van der Walls force and so on. Combining micro-Raman spectroscopy with x-ray diffraction measurements, we get the total residual stress of 900MPa, and its components of the lattice mismatch stress is about of 815.8MPa, the capillary stress of 13.2MPa and the oxidation stress of 71MPa for a chemical etched porous silicon sample with a certain porosity. It can be seen that the lattice mismatch between the porous layer and the Si substrate is a major source (about 91%) for the total residual stress of the porous silicon.
机译：在本文中，金相显微镜，原子力显微镜和场发射扫描电子显微镜分别用于研究多孔硅膜的表面和截面形态。建立了简单的微观结构和微观力学模型来解释多孔硅中残余应力的起源机理。实验结果表明，残余应力与多孔硅的微观结构密切相关，由晶格失配应力，毛细应力，氧化应力，范德华力等组成。将微拉曼光谱与X射线衍射测量相结合，我们得到了900MPa的总残余应力，其组成的晶格失配应力约为815.8MPa，毛细管应力为13.2MPa，化学氧化应力为71MPa。蚀刻具有一定孔隙率的多孔硅样品。可以看出，多孔层和Si衬底之间的晶格失配是多孔硅的总残余应力的主要来源（约91％）。

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