首页> 外文会议>International Conference of Chinese Society of Micro-Nano Technology;Annual Conference of the Chinese Society of Micro-Nano Technology >Structure Design, Fabrication and Characteristics of Polysilicon nano-thin films Resistances Pressure Sensor Based on MEMS Technology
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Structure Design, Fabrication and Characteristics of Polysilicon nano-thin films Resistances Pressure Sensor Based on MEMS Technology

机译:基于MEMS技术的多晶硅纳米薄膜电阻压力传感器的结构设计,制作与特性

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摘要

A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA , full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80 ℃, the coefficient of zero temperature and sensitivity temperature is -960 ppm/℃ and -820 ppm /℃ respectively.
机译:本文采用MEMS技术在单晶硅衬底上设计并制造了一种多晶硅纳米薄膜压力传感器,该传感器由惠斯通电桥结构组成,在方形硅膜上制造了四个多晶硅纳米薄膜电阻。实验结果表明,在0.875mA恒流电源下,室温下满量程输出为24.05 mV,灵敏度为0.15 mV / kPa,温度为-20至80℃时,零温度系数和灵敏度温度分别为-960ppm /℃和-820ppm /℃。

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