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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Verification of the system of defect inspection on patterned wafers using sub-200 nm wavelength light
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Verification of the system of defect inspection on patterned wafers using sub-200 nm wavelength light

机译：验证使用波长小于200 nm的光对图案化晶片进行缺陷检查的系统

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Bright-field inspection is still strongly required for 45 run semiconductor device processes to detect several kinds of defects on patterned wafers. We have been carrying out verification of our defect inspection system using sub-200nm wavelength light. As part of the verification work, we evaluated the system's inspection imaging characteristics by using a pilot POC tool and by simulations. The image evaluation system used has a sub-200 nm wavelength light source. Two kinds of magnifications, 100x or 250x, can be selected. Test wafers with the same patterns and programmed defects were used. Simultaneously, UV (365 nm) images were taken by an inspection tool. The results of the reflectivity simulations suggest that the average reflectance at 198 nm is basically the same as that for present inspection wavelengths. A three dimensional electromagnetic simulator was used to evaluate the images of patterns and programmed defects described above. Image contrasts for Line & Spaces were also calculated. It is confirmed from both the experimental and simulation results that (1) sub-200 nm images are superior to UV images in contrast, and that (2) the image contrast improves with increasing magnification because of a reduction in pixel size. Further, a quantitative defect detection procedure was taken to identify programmed defects. Several sizes of extrusion defects were evaluated. Examination of the differential images under the three optical conditions showed that sub-200 nm light and 250x were most desirable, followed by sub-200 nm light and 100x. Sub-200 nm provided an enough pixel grey level difference value to detect extrusion defects down to 50 nm.
机译：45道半导体器件工艺仍然强烈需要进行明场检查，以检测图案化晶圆上的几种缺陷。我们一直在使用200nm以下波长的光对缺陷检查系统进行验证。作为验证工作的一部分，我们通过使用试点POC工具和仿真来评估系统的检查成像特性。所使用的图像评估系统具有低于200 nm波长的光源。可以选择两种放大倍率，即100x或250x。使用具有相同图案和编程缺陷的测试晶圆。同时，用检查工具拍摄了UV（365 nm）图像。反射率模拟的结果表明，在198 nm处的平均反射率与当前检查波长的平均反射率基本相同。三维电磁模拟器用于评估上述图案和已编程缺陷的图像。还计算了“行与空间”的图像对比度。从实验和仿真结果都可以确认，（1）对比度低于200 nm的图像优于UV图像，并且（2）由于像素尺寸的减小，图像对比度随放大倍率的提高而提高。此外，采用定量缺陷检测程序来识别已编程的缺陷。评价了几种尺寸的挤出缺陷。在三种光学条件下对差分图像的检查表明，最理想的是低于200 nm的光和250x，然后是低于200 nm的光和100x。 200 nm以下可提供足够的像素灰度级差异值，以检测低至50 nm的挤出缺陷。

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