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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Electron Beam Based Modification of Lithographic Materials And The Impact on Critical Dimensional Metrology
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Electron Beam Based Modification of Lithographic Materials And The Impact on Critical Dimensional Metrology

机译：电子束对光刻材料的改性及其对临界尺寸计量学的影响

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摘要

CD-SEM is currently poised as the primary method of choice for CD metrology because of its nanometer scale spatial resolution, superior precision, and relatively high throughput. However, issues still continue to emerge that can threaten the measurement performance for the various sample types encountered. The impact of issues arising from electron beam induced modification of the sample materials on critical dimensional metrology and lithographic process control will be assessed and approaches to mitigate these effects will be proposed. The two primary issues of interest related to scanned electron beam based measurements of patterned lithographic materials in this article are shrinkage of the ArF 193nm resist and undesired deposition of contaminants occurring during CDSEM measurements.
机译：CD-SEM由于其纳米级的空间分辨率，卓越的精度和相对较高的通量，目前准备成为CD计量学的主要选择方法。但是，仍然存在各种问题，这些问题可能会威胁到所遇到的各种样品类型的测量性能。将评估由电子束引起的样品材料改性对临界尺寸计量学和光刻工艺控制产生的问题的影响，并将提出减轻这些影响的方法。本文中与基于扫描电子束的图案化光刻材料的测量有关的两个主要感兴趣的问题是ArF 193nm抗蚀剂的收缩和CDSEM测量期间发生的不希望有的污染物沉积。

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