Electron Beam Based Modification of Lithographic Materials And The Impact on Critical Dimensional Metrology

机译：基于电子束的光刻材料改性及对临界尺寸计量的影响

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CD-SEM is currently poised as the primary method of choice for CD metrology because of its nanometer scale spatial resolution, superior precision, and relatively high throughput. However, issues still continue to emerge that can threaten the measurement performance for the various sample types encountered. The impact of issues arising from electron beam induced modification of the sample materials on critical dimensional metrology and lithographic process control will be assessed and approaches to mitigate these effects will be proposed. The two primary issues of interest related to scanned electron beam based measurements of patterned lithographic materials in this article are shrinkage of the ArF 193nm resist and undesired deposition of contaminants occurring during CDSEM measurements.

机译：CD-SEM目前被视为CD计量选择的主要选择，因为其纳米尺度空间分辨率，卓越的精度和相对较高的吞吐量。但是，问题仍然继续出现，这可能会威胁到遇到的各种样本类型的测量性能。从电子束引起的问题对临界尺寸计量和光刻过程控制的改变的影响将被评估，并将提出减轻这些效果的方法。与扫描电子束的基于扫描的电子束测量有关本文中的图案化光刻材料的两个主要问题是ARF 193nm抗蚀剂的收缩，并且在CDSEM测量期间发生的污染物的不希望沉积。

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《Conference on Metrology, Inspection, and Process Control for Microlithography》|2006年||共11页
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H. Marchman; G.F. Lorusso; D. Soltz; L. Grella; Z. Luo; J.D. Byers; J. Varner; S. Vedula; R. Kuppa; A.R. Azordegan; G. Storms; L.H. Leunissen; SPIE-The International Society for Optical Engineering;
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Electron Beam Based Modification of Lithographic Materials And The Impact on Critical Dimensional Metrology

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