• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >In-line Monitoring of Advanced Copper CMP Processes with Picosecond Ultrasonic Metrology
【24h】

In-line Monitoring of Advanced Copper CMP Processes with Picosecond Ultrasonic Metrology

机译：使用皮秒超声计量学对高级铜CMP工艺进行在线监测

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Chemical mechanical planarization (CMP) is a challenging process step for manufacturers implementing dual-damascene architectures at the 65 nm technology node. The polishing rate can vary significantly from wafer-to-wafer, across a single wafer, and across a single die, depending on factors including electroplate profile, slurry chemistry, pad wear, and underlying structure. The process is further complicated by the introduction of low-k dielectrics that have significantly different mechanical properties than the harder SiO_2 they replace. Picosecond ultrasonics is a nondestructive, small-spot method that can be used for in-line on-product monitoring of metal processes including copper CMP. In this paper we will present gauge-capable picosecond ultrasonic results on copper erosion test structures that also demonstrate excellent correlation with electrical test measurements and TEM results on 65 nm products.
机译：对于在65 nm技术节点上实施双大马士革体系结构的制造商而言，化学机械平面化（CMP）是具有挑战性的工艺步骤。取决于晶片电镀轮廓，浆料化学性质，焊盘磨损和下层结构等因素，晶片之间的抛光速率在晶片之间，晶片之间以及单个管芯之间可能会有很大差异。低介电常数的引入使该工艺更加复杂，低介电常数的机械性能与其所替代的较硬的SiO_2的机械性能明显不同。皮秒超声波是一种非破坏性的小斑点方法，可用于在线监测包括铜CMP在内的金属工艺。在本文中，我们将介绍在铜腐蚀测试结构上具有测量能力的皮秒超声结果，这些结果也证明与电测试测量和65 nm产品的TEM结果具有极好的相关性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号