Analog Performance of Dynamic Threshold Voltage SOI MOSFET

机译：动态阈值电压SOI MOSFET的模拟性能

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This work presents the study of analog performance of Dynamic Threshold Voltage SOI MOSFET (DTMOS) devices compared to the conventional SOI MOSFET. The performance of DTMOS is analyzed by two-dimensional numerical simulations. When the gate voltage increases in DTMOS (body tied to gate), there is a body potential increase, which results in a higher drain current due to the sum of the MOS current with the bipolar transistor (BJT) one. Unfortunately, in this device is not possible to apply high gate voltage. High gate voltage (above 0.7 V) causes the source junction direct bias. The drain current increase is responsible for the transconductance over drain current improvement and contributes to the increase of the device intrinsic gain up to 15 dB for devices studied. The cut-off frequency is also improved.

机译：这项工作提出了与传统SOI MOSFET相比动态阈值电压SOI MOSFET（DTMOS）器件的模拟性能研究。通过二维数值模拟分析了DTMOS的性能。当DTMOS（与栅极相连的主体）中的栅极电压增加时，主体电位会增加，由于双极晶体管（BJT）的MOS电流之和，导致较高的漏极电流。不幸的是，在该器件中不可能施加高栅极电压。高栅极电压（高于0.7 V）导致源极结直接偏置。漏极电流的增加负责跨导过漏电流的改善，并有助于将所研究器件的器件固有增益提高到15 dB。截止频率也得到改善。

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来源
《Microelectronics Technology and Devices-SBMicro 2008》|2008年|169-175|共7页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
Jefferson Oliveira Amaro; Paula Ghedini Der Agopian; Joao Antonio Martino;
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作者单位

LSI/ PSI/USP - University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3 n° 158, 05508-900 - SP - Brazil;

LSI/ PSI/USP - University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3 n° 158, 05508-900 - SP - Brazil;

LSI/ PSI/USP - University of Sao Paulo Av. Prof. Luciano Gualberto, trav. 3 n° 158, 05508-900 - SP - Brazil;

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正文语种 eng
中图分类微电子学、集成电路（IC）;
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1. Threshold voltage control range in variable threshold voltage fully-depleted SOI MOSFETs [J] . Toshiharu Nagumo, Takashi Inukai, Atsumasa Ohsawa, 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002,第273期

机译：可变阈值电压全耗尽SOI MOSFET的阈值电压控制范围
2. Threshold voltage control range in variable threshold voltage fully-depleted SOI MOSFETs [J] . Toshiharu Nagumo, Takashi Inukai, Atsumasa Ohsawa, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2002,第271期

机译：可变阈值电压全耗尽SOI MOSFET的阈值电压控制范围
3. Threshold voltage control range in variable threshold voltage fully-depleted SOI MOSFETs [J] . Toshiharu Nagumo, Takashi Inukai, Atsumasa Ohsawa, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2002,第271期

机译：可变阈值电压完全耗尽的SOI MOSFET中的阈值电压控制范围
4. Analog Performance of Dynamic Threshold Voltage SOI MOSFET [C] . Jefferson Oliveira Amaro, Paula Ghedini Der Agopian, Joao Antonio Martino Symposium on Microelectronics Technology and Devices . 2008

机译：动态阈值电压SOI MOSFET的模拟性能
5. Cause and effect of threshold-voltage instability on the reliability of silicon-carbide mosfets [D] . Lelis, Aivars J. 2011

机译：阈值电压不稳定性对碳化硅mosfet可靠性的原因和影响
6. Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET PN Junction Diode and Resistor [O] . Durgadevi Elamaran, Yuya Suzuki, Hiroaki Satoh, 2020

机译：房间温度Terhertz天线耦合钻孔SOI基温度传感器的性能比较：MOSFETPN结二极管和电阻器
7. High Drive-Current Electrically Induced Body Dynamic Threshold SOI MOSFET (EIB-DTMOS) with Large Body Effect and Low Threshold Voltage [O] . Makoto Takamiya, Toshiro Hiramoto 2015

机译：具有大体效应和低阈值电压的高驱动电流电感应体动态阈值sOI mOsFET（EIB-DTmOs）

Analog Performance of Dynamic Threshold Voltage SOI MOSFET

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