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首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise
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Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise

机译：用低频噪声评估中子辐照对SOI和应变SOI MuGFET的影响

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摘要

One of the anticipated assets of multiple-gate Silicon-on-Insulator (SOI) MOSFETs (MuGFETs) is the enhanced tolerance for ionizing radiation, compared with their single-gate counterparts. This is related to the better screening from the buried oxide and interface which is the Achilles heel of Fully Depleted SOI technologies, exposed to a radiation environment (1). This potential has been validated experimentally for gate-all-around structures (2-4) and for Fin- or MuGFETs (5-10). However, more recent radiation effects studies indicate that pronounced Total Ionization Dose (TID) degradation occurs under proton (11) or neutron irradiation (12,13). This may be related to the creation of charges in the buried oxide (BOX) (11), in the nitride spacers (12) or at the Si/BOX interface. Another related concern is that the application of strain engineering can introduce additional susceptibility to radiation damage (11,14). This is associated with the fact that displacement damage may relax the processing-induced strain and, hence, causes a loss of the mobility and on-current improvement. While initially, no impact of 63 MeV proton (15) or~(60)Co y-irradiation (16) was reported, other studies indicate a relaxation of the processing-induced stress (17), which may lead to a reduction of the low-field mobility and of the device output current. On the contrary, it has also been shown that mechanically stressed transistors exhibit a better radiation performance under X-ray irradiation than unstressed devices (18), indicating that the impact of stress on the radiation performance strongly depends on the method of strain engineering employed. This certainly calls for further investigations.
机译：与单栅极绝缘体相比，多栅极绝缘体上硅（SOI）MOSFET（MuGFET）的预期资产之一是对电离辐射的耐受性增强。这与对暴露于辐射环境的完全耗尽SOI技术的致命弱点-掩埋氧化物和界面进行更好的屏蔽有关（1）。这种潜力已经通过实验验证了全方位栅结构（2-4）和Fin-或MuGFET（5-10）。但是，最近的辐射效应研究表明，在质子（11）或中子辐照（12,13）下会发生明显的总电离剂量（TID）降解。这可能与在掩埋氧化物（BOX）（11），氮化物间隔物（12）或Si / BOX界面处产生电荷有关。另一个相关的关注点是，应变工程的应用可能会增加辐射损伤的敏感性（11,14）。这与以下事实有关：位移损坏可能会放松加工引起的应变，从而导致迁移率损失和电流改善。虽然最初没有报道63 MeV质子（15）或〜（60）Co y辐照（16）的影响，但其他研究表明，加工诱导的应力得到了缓解（17），这可能导致应力的降低。低场迁移率和器件输出电流。相反，还显示出机械应力晶体管在X射线辐射下表现出比无应力器件更好的辐射性能（18），表明应力对辐射性能的影响很大程度上取决于所采用的应变工程方法。当然，这需要进一步调查。

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  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    E. Simoen; S. Put; N. Collaert; C. Claeys; V. Kilchytska; et al;

  • 作者单位

    Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

    Imec, Kapeldreef 75, B-3001 Leuven, Belgium, also at EE Depart, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium,rnSCKCEN, Belgian Nuclear Research Centre, B-2400 Mol, Belgium;

    Imec, Kapeldreef 75, B-3001 Leuven, Belgium;

    Imec, Kapeldreef 75, B-3001 Leuven, Belgium, also at EE Depart, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium;

    Microelectronics Laboratory, University catholique de Louvain, 1348 Louvain-la-Neuve,Belgium;

    et al;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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