Resonance Modes in InAs/InGaAlAs/InP Quantum Dot Microdisk Resonators

机译：InAs / InGaAlAs / InP量子点微盘谐振器中的谐振模式

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Quantum dots (QDs) can provide an efficient mechanism for stimulated emission in active region of micro-resonator lasers. Active-microdisk resonators offer great advantage in obtaining stimulated emission in small volume (1) since they support whispering-gallery modes (WGMs), which are very confined resonances with maximum intensity near the disk edge (2). Microdisks are shown to produce a high quality factor Q (3) which may consequently lead to low laser thresholds. High-quality self-assembled QD lasers based on InAs/GaAs (4,5) and InAs/InP (6-8) have been demonstrated. InAs QD's on InP substrates have been shown to emit in the wavelength range of 1200-2000 nm with high efficiency (9-11), but the best results reported on InAs/InP QD lasers are limited to either optical pumping or pulsed current injection operation at room

机译：量子点（QD）可以为微谐振器激光器的有源区域中的受激发射提供有效的机制。有源微型磁盘谐振器在小体积（1）中获得受激发射方面具有巨大优势，因为它们支持耳语画廊模式（WGM），这是非常狭窄的谐振，在磁盘边缘附近具有最大强度（2）。微型磁盘显示出高品质因数Q（3），因此可能导致较低的激光阈值。已经证明了基于InAs / GaAs（4,5）和InAs / InP（6-8）的高质量自组装QD激光器。已显示InP基板上的InAs QD可以在1200-2000 nm的波长范围内高效发光（9-11），但是InAs / InP QD激光器报告的最佳结果仅限于光泵浦或脉冲电流注入操作在房间里

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《Microelectronics technology and devices - SBMicro 2010》|2010年|p.289-293|共5页
会议地点 Sao Paulo(BR);Sao Paulo(BR)
作者
J. R. Mialichi; L. A. M. Barea; P. L. de Souza; R. M. S. Kawabata; M. P. Pires; et al;
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Applied Physics Department, "Gleb Wataghin" Physics Institute, University of Campinas - UNICAMP, 13083-970 Campinas, SP, Brazil;

Applied Physics Department, "Gleb Wataghin" Physics Institute, University of Campinas - UNICAMP, 13083-970 Campinas, SP, Brazil;

Semiconductor Laboratory, Telecommunication Research Center, PUC-Rio, 22451-041 Rio de Janeiro, RJ, Brazil;

Semiconductor Laboratory, Telecommunication Research Center, PUC-Rio, 22451-041 Rio de Janeiro, RJ, Brazil;

Physics Institute, Federal University of Rio de Janeiro - UFRJ, 21941-909 Rio de Janeiro, RJ, Brazil;

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1. Carrier relaxation bottleneck in type-Ⅱ InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm [J] . Syperek M., Andrzejewski J., Rogowicz E., Applied Physics Letters . 2018,第22期

机译：Ⅱ型InAs / InGaAlAs / InP（001）耦合量子点-量子阱结构中载流子弛豫瓶颈的发射峰为1.55μm
2. High Speed 1.55 $mu{rm m}$ InAs/InGaAlAs/InP Quantum Dot Lasers [J] . Gready D., Eisenstein G., Ivanov V., IEEE Photonics Technology Letters . 2014,第1期

机译：高速1.55μm{rm m} $ InAs / InGaAlAs / InP量子点激光器
3. Scanning near-field microscopy of microdisk resonator with InP/GalnP quantum dots using cantilever-based probes [J] . A V Shelaev, A M Mintairov, P S Dorozhkin, Journal of Physics: Conference Series . 2016,第1期

机译：使用基于悬臂的探针用INP / GALNP量子点用INP / GALNP量子点扫描Microdisk谐振器的近场显微镜
4. Resonance Modes in InAs/InGaAlAs/InP Quantum Dot Microdisk Resonators [C] . J. R. Mialichi, L. A. M. Barea, P. L. de Souza, Symposium on microelectronics technology and devices . 2010

机译：INAS / INGAALAS / INP量子点微仪谐振器的共振模式
5. Immunostimulatory Effects of Antigen-Conjugated InP/ZnS Quantum Dot Nanoparticles in an Avian Model [D] . Lyle, Chris. 2018

机译：抗原缀合的INP / ZnS量子点纳米粒子在禽类模型中的免疫刺激作用
6. Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots [O] . Mikhail V Maximov, Natalia V Kryzhanovskaya, Alexey M Nadtochiy, 2014

机译：基于InAs / InGaAs / GaAs量子点的超小型微盘和微环激光器
7. Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots [O] . Gong, Ming, Duan, Kaimin, Li, Chuan-Feng, 2007

机译：自组装Inas / Inp量子点的电子结构：a 与自组装Inas / Gaas量子点的比较
8. High Resolution Optical Spectroscopy of Single Quantum Dots and Cavity- QED Effects and Lasing in Quantum Dot Microdisk Resonator Structures [R] . Sercel, P. C. 2000

机译：量子点微盘谐振器结构中单量子点的高分辨率光谱和腔QED效应和激光

Resonance Modes in InAs/InGaAlAs/InP Quantum Dot Microdisk Resonators

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