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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Tantalum Nitride as Electrode for MOS Technology and Schottky Diode
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Tantalum Nitride as Electrode for MOS Technology and Schottky Diode

机译：氮化钽作为MOS技术和肖特基二极管的电极

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摘要

TaN films have been used as gate electrodes in MOS capacitors, which were fabricated with 18 nm thick SiO_2 as gate dielectric, and in Schottky diodes on n-type Si (100) substrates. TaN layer presented electrical resistivity of 327 μΩ.cm and poly crystalline structure. MOS capacitors and Schottky diodes were sintered in conventional furnace in forming gas at 450 ℃ for different annealing times between 5 and 30 min. MOS Capacitors and Schottky diodes presented TaN/SiO_2/Si/Al and TaN/Si/Al structures and were electrical characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements. From C-V measurements, the extracted TaN work function values and effective charge densities were between 3.9 and 4.4 eV, 10~(10) and 10~(12) cm~(-2), respectively. From I-V measurements, the work function values between 4.3 and 4.4 eV were extracted. Both devices present excellent results, which indicate that TaN electrodes can be used for MOS Technology and Schottky Diode.
机译：TaN膜已被用作MOS电容器中的栅电极，MOS电容器是用18 nm厚的SiO_2作为栅极电介质制造的，并且已被用作n型Si（100）衬底上的肖特基二极管。 TaN层的电阻率为327μΩ.cm，具有多晶结构。在常规炉中烧结MOS电容器和肖特基二极管，在450℃下形成气体，退火时间为5至30分钟。 MOS电容器和肖特基二极管呈现出TaN / SiO_2 / Si / Al和TaN / Si / Al结构，并通过电容-电压（C-V）和电流-电压（I-V）测量进行电气表征。通过C-V测量，提取出的TaN功函数值和有效电荷密度分别在3.9和4.4 eV之间，分别在10〜（10）和10〜（12）cm〜（-2）之间。从IV测量中，提取出4.3至4.4eV之间的功函数值。两种器件均具有出色的结果，这表明TaN电极可用于MOS Technology和肖特基二极管。

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  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    L.P.B. Lima; J. A. Diniz; I. Doi; J. Miyoshi; A.R. Silva; J. Godoy Fo;

  • 作者单位

    School of Electrical and Computer Engineering, University of Campinas P. O. Box 6101, 13083-970 Campinas-SP, Brazil,Center for Semiconductor Components, University of Campinas P. O. Box 6061, 13083-870 Campinas-SP, Brazil;

    School of Electrical and Computer Engineering, University of Campinas P. O. Box 6101, 13083-970 Campinas-SP, Brazil,Center for Semiconductor Components, University of Campinas P. O. Box 6061, 13083-870 Campinas-SP, Brazil;

    School of Electrical and Computer Engineering, University of Campinas P. O. Box 6101, 13083-970 Campinas-SP, Brazil,Center for Semiconductor Components, University of Campinas P. O. Box 6061, 13083-870 Campinas-SP, Brazil;

    School of Electrical and Computer Engineering, University of Campinas P. O. Box 6101, 13083-970 Campinas-SP, Brazil,Center for Semiconductor Components, University of Campinas P. O. Box 6061, 13083-870 Campinas-SP, Brazil;

    School of Electrical and Computer Engineering, University of Campinas P. O. Box 6101, 13083-970 Campinas-SP, Brazil,Center for Semiconductor Components, University of Campinas P. O. Box 6061, 13083-870 Campinas-SP, Brazil;

    Center for Semiconductor Components, University of Campinas P. O. Box 6061, 13083-870 Campinas-SP, Brazil;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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