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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Impact of the Series Resistance in the I-V Characteristics of nMOS Junctionless Nanowire Transistors
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Impact of the Series Resistance in the I-V Characteristics of nMOS Junctionless Nanowire Transistors

机译：串联电阻对nMOS无结纳米线晶体管I-V特性的影响

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摘要

The series resistance (R_S) of Junctionless Nanowire Transistors (JNTs) with different doping concentrations was extracted from 473 K down to 100 K. The source/drain parasitic resistance presented by JNTs was compared to the one presented by classical inversion mode (IM) triple gate devices and the impact of the series resistance on the drain current of the devices was evaluated. The R_S analysis was carried out through experimental results and devices tridimensional numerical simulations. According to the study, R_S presents opposite behavior with the temperature variation in IM triple transistors and JNTs. In the latter, a reduction on R_S is noted with the temperature increase, whereas a resistance decrease is obtained with the temperature lowering in IM devices. The parasitic resistance in JNTs affects the drain current in such a way that there may not be a Zero Temperature Coefficient (ZTC) operation point.
机译：从473 K降低到100 K，提取了不同掺杂浓度的无结纳米线晶体管（JNT）的串联电阻（R_S）。将JNTs产生的源极/漏极寄生电阻与经典反转模式（IM）的三倍相比较。评估了栅极器件以及串联电阻对器件漏极电流的影响。 R_S分析是通过实验结果和设备三维数值模拟进行的。根据研究，R_S在IM三重晶体管和JNT中呈现出与温度变化相反的行为。在后者中，随着温度的升高，R_S减小，而随着IM器件的温度降低，电阻减小。 JNT中的寄生电阻会以不存在零温度系数（ZTC）工作点的方式影响漏极电流。

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  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    R. T. Doria; R. D. Trevisoli; M. A. Pavanello;

  • 作者单位

    Department of Electrical Engineering, Centre Universitario da FEI, Av. Humberto de Alencar Castelo Branco 3972, 09850-901, Sao Bernardo do Campo, Brazil;

    LSI/PSI/EPUSP - University of Sao Paulo;

    Department of Electrical Engineering, Centre Universitario da FEI, Av. Humberto de Alencar Castelo Branco 3972, 09850-901, Sao Bernardo do Campo, Brazil,LSI/PSI/EPUSP - University of Sao Paulo;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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