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首页> 外文会议>Microwave Integrated Circuits conference, 2009. EuMIC 2009 >200W discrete GaN HEMT power device in a 7×7mm CMC package
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200W discrete GaN HEMT power device in a 7×7mm CMC package

机译：采用7×7mm CMC封装的200W分立GaN​​ HEMT功率器件

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摘要

This paper presents the development of high power AlGaN/GaN HEMTs on GaN/SiC epi-materials in MACOM Technology Solutions. Instead using state-of-the art via-hole technology popular in the GaN HEMT industry to have the common-Source on the device bottom, our Source-contact is designed on the device top-surface for enhancing its surface thermal dissipation as well as achieving variable input and output inductance. The effects of various layout design and fabrication processes on the device performance as well as thermal resistance were studied. It showed that the gate-gate pitch was scaled up from 29 to 42µm for optimal device performance with increasing the unit gate width from 125 to 200µm. A similar thermal resistance of 1.38°C/W was observed for these two designs. A 25mm total gate-periphery single chip packaged in a 7×3.5mm CMC package showed 120W (4.8 W/mm) P1dB and 130W (5.2 W/mm) P2dB CW output at 2GHz, 10.5dB liner gain and 58% drain efficiency with a drain bias of 36V. A single chip with a 7×7mm larger package is in processing with an expected power of 200W CW at 1.85GHz and 14dB liner gain.
机译：本文介绍了在MACOM Technology Solutions中基于GaN / SiC Epi材料的高功率AlGaN / GaN HEMT的开发。我们不是使用GaN HEMT行业中流行的最先进的通孔技术在器件底部使用共源，而是将源触点设计在器件顶表面上，以增强其表面散热，以及实现可变的输入和输出电感。研究了各种布局设计和制造工艺对器件性能以及热阻的影响。结果表明，栅极栅间距从29μm扩大到42μm，以实现最佳的器件性能，同时将单位栅宽从125μm增加到200μm。这两种设计的热阻相似，为1.38°C / W。封装在7×3.5mm CMC封装中的25mm总栅极外围单芯片在2GHz，10.5dB时显示120W（4.8 W / mm）P1dB和130W（5.2 W / mm）P 2dB CW输出漏极增益为36V时，线性增益和58％的漏极效率。正在处理具有7×7mm更大封装的单芯片，其预期功率为1.85GHz时200W CW，线性增益为14dB。

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