• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines >RESIDUAL STRESS CONTROL TO OPTIMIZE PZT MEMS PERFORMANCE
【24h】

RESIDUAL STRESS CONTROL TO OPTIMIZE PZT MEMS PERFORMANCE

机译：残余应力控制以优化PZT MEMS性能

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Flexing piezoelectric membranes can be used to convert mechanical energy to electrical energy. The overall deflection of individual membranes is impacted by the residual stress in the system. Membranes comprised of silicon dioxide, Ti/Pt, lead- zirconate- titanate (PZT), and TiW/Au layers deposited on a micromachined boron doped silicon wafer were examined for both morphology and residual stress. By characterizing the membrane residual stress induced during processing with x-ray diffraction, wafer curvature, and bulge testing and identifying methods to reduce stress, the membrane performance and reliability can be optimized. For Zr:Ti ratios of 52:48, the residual stress in the PZT was 350 MPa tensile, with an overall effective stress in the composite membrane of 150 MPa. A reduction of stress was accomplished by changing the PZT chemistry to 40:60 Zr:Ti in the PZT to obtain a stress in the PZT of 160 MPa tensile and an overall effective membrane stress of 100 MPa. The crystallization of the 52:48 PZT film at 700 ℃ causes a 28% reduction in the thickness of the film.
机译：挠曲压电膜可用于将机械能转换为电能。各个膜的总挠度受系统中的残余应力影响。检查了由二氧化硅，Ti / Pt，锆钛酸铅（PZT）和沉积在微机械掺杂硼的硅晶片上的TiW / Au层组成的膜的形貌和残余应力。通过表征在X射线衍射，晶圆曲率和凸起测试过程中引起的膜残余应力，并确定降低应力的方法，可以优化膜性能和可靠性。对于52:48的Zr：Ti比，PZT中的残余应力为350 MPa拉伸，复合膜中的总有效应力为150 MPa。通过将PZT的化学性质更改为PZT中的40:60 Zr：Ti来实现应力的减小，以使PZT中的应力为160 MPa拉伸，总有效膜应力为100 MPa。在700℃下52:48 PZT薄膜的结晶导致薄膜厚度减少28％。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号