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首页> 外文会议>Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines >Nonuniformity in Selective Anodization of Silicon and its Application to Micro-Tip Fabrication
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Nonuniformity in Selective Anodization of Silicon and its Application to Micro-Tip Fabrication

机译：硅选择性阳极氧化中的不均匀性及其在微尖端制造中的应用

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Characteristics of selective anodization of p~+-type Si have been studied. Temporal evolution of the etching front was visualized by periodic porosity modulated anodization. The etching front proceeded inside along the bottom of mask making its angle with the mask bottom face sharper and sharper. It was also found that the etching front proceeds forming a specifically angled facet. Selective anodization was applied to form Si micro-tips. Proper time of anodization for p~+-type Si substrate with an n-type circular shape mask left a Si micro-tip formed on the substrate. A high resolution SEM observation revealed that the apex of the tip was composed of {110) facets.
机译：研究了p〜+型Si的选择性阳极氧化特性。通过周期性的孔隙率调节阳极氧化可视化了蚀刻前沿的时间演变。蚀刻前沿沿着掩模的底部在内部进行，使得其与掩模底面的角度越来越尖。还发现蚀刻前沿继续形成特定角度的刻面。进行选择性阳极氧化以形成硅微尖端。对于带有n型圆形掩模的p〜+型Si基板，适当的阳极氧化时间会在基板上形成一个Si微尖端。高分辨率SEM观察显示，针尖的顶点由{110）小面组成。

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