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首页> 外文会议>Nanotechnology amp; applications >OPTIMAL PROCESS FOR THE HIGH PERFORMANCE OF ZnO THIN FILM TRANSISTORS
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OPTIMAL PROCESS FOR THE HIGH PERFORMANCE OF ZnO THIN FILM TRANSISTORS

机译：高性能ZnO薄膜晶体管的优化工艺。

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The object of this study was to improve the performance of ZnO thin film transistors (TFTs) by the optimal process such as a controlling of oxygen partial pressure, rapid thermal annealing (RTA) process, and proton irradiation. ZnO thin films are deposited as channel layer with various oxygen partial pressures. After ZnO-TFTs fabrication, in order to improve the interface characteristics between source/drain electrodes and the channel layer, we have conducted the RTA process. However, the conductivity of the ZnO channel layer was dramatically increased during the RTA process. Therefore, the RTA-treated ZnO-TFTs did not show the proper output and transfer characteristics. In order to control the electrical properties of the channel layer, we exposed the RTA-treated ZnO-TFTs to 6.1-MeV proton irradiation beam energy at fluences from 6.7× 10~(12) cm~(-2) to 6.5× 10~(14) cm~(-2). The conductivity of the ZnO thin film decreased after high-dose proton irradiation. The field effective mobility of ZnO-TFTs increased from 1.65 cm~2/V-s to 4.12 cm~2/V-s after the RTA and the high dose proton irradiation. We obtained an enhancement of ZnO-TFT performance using the controlling of oxygen partial pressure, RTA process, and high-dose proton irradiation.
机译：这项研究的目的是通过诸如控制氧分压，快速热退火（RTA）工艺和质子辐照的最佳工艺来改善ZnO薄膜晶体管（TFT）的性能。 ZnO薄膜以不同的氧分压沉积为沟道层。在ZnO-TFTs制造之后，为了改善源/漏电极与沟道层之间的界面特性，我们进行了RTA工艺。但是，在RTA过程中，ZnO通道层的电导率显着增加。因此，经RTA处理的ZnO-TFT没有显示适当的输出和传输特性。为了控制沟道层的电性能，我们将经RTA处理的ZnO-TFT暴露于6.1-MeV质子辐照束能量下，辐照度范围为6.7×10〜（12）cm〜（-2）至6.5×10〜。 （14）厘米〜（-2）。大剂量质子辐照后，ZnO薄膜的电导率降低。在RTA和高剂量质子辐照后，ZnO-TFT的场有效迁移率从1.65 cm〜2 / V-s增加到4.12 cm〜2 / V-s。通过控制氧分压，RTA过程和大剂量质子辐照，我们获得了ZnO-TFT性能的增强。

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