PULSED LASER DEPOSITION OF HIGHLY CRYSTALLINE GaN FILMS ON SAPPHIRE

著录项

• 来源
  《Nitride semiconductors》|1997年|343-348|共6页
• 会议地点 Boston MA(US)
• 作者

  R.D. Vispute; V. Talyansky; S. Chupoon; R. Enck; T. Dahmas; S.B. Ogale; R.P. Sharma; T. Venkatesan; Y.X. Li; L.G. Salamanca-Riba; A. A. Iliadis; M. He; X. Tang; J. B. Halpern; M.G. Spencer; M. A. Khan; K.A. Jones; V. Belkov V. Botnaryuk; I. Diakonu; L. Fedorov; Y. Zhilyaev;

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• 作者单位

  CSR, Dept. of Physics, University of Maryland, College Park, MD 20742;

  CSR, Dept. of Physics, University of Maryland, College Park, MD 20742;

  CSR, Dept. of Physics, University of Maryland, College Park, MD 20742;

  CSR, Dept. of Physics, University of Maryland, College Park, MD 20742;

  CSR, Dept. of Physics, University of Maryland, College Park, MD 20742;

  CSR, Dept. of Physics, University of Maryland, College Park, MD 20742;

  CSR, Dept. of Physics, University of Maryland, College Park, MD 20742;

  CSR, Dept. of Physics, University of Maryland, College Park, MD 20742;

  Department of Materials and Nuclear Engineering, University of Maryland, Collge Park, MD 20742;

  Department of Materials and Nuclear Engineering, University of Maryland, Collge Park, MD 20742;

  Department of Electrical Engineering, University o;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词