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Si AND Mg DOPED GaN LAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY USING AMMONIA

机译：利用氨气源分子束表观生长的Si和Mg掺杂GaN层

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The growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH_3. Undoped GaN layers were grown at 830℃ with growth rates larger than 1 μm/h. Optical properties are characteristics of high quality GaN material and the linewidth of x-ray diffraction (0002) rocking curve is less than 350 arcsec. N- and p-type doping were achieved by using solid sources of Si and Mg. No post-growth annealing was needed to activate the Mg acceptors. As-grown GaN:Mg layers exhibit hole concentrations of 3×10~(17) cm~(-3) and mobilities of 8 cm~2/Vs at 300 K. Light emitting diodes (LEDs) based on GaN p-n homojunction have been processed. The turn on voltage is 3 V and the forward voltage is 3.7 V at 20 mA. The 300 K electroluminescence (EL) peaks at 390 nm.

机译：GaN层的生长是使用NH_3通过分子束外延（MBE）在c面蓝宝石衬底上进行的。非掺杂GaN层在830℃下生长，生长速率大于1μm/ h。光学特性是高质量GaN材料的特征，X射线衍射（0002）摇摆曲线的线宽小于350 arcsec。通过使用固态的Si和Mg来实现N型和p型掺杂。不需要后生长退火来激活镁受体。刚生长的GaN：Mg层在300 K下的空穴浓度为3×10〜（17）cm〜（-3），迁移率为8 cm〜2 / Vs。基于GaN pn同质结的发光二极管（LED）处理。 20 mA时，开启电压为3 V，正向电压为3.7V。 300 K电致发光（EL）在390 nm处出现峰。

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《Nitride semiconductors》|1997年|211-216|共6页
会议地点 Boston MA(US)
作者
N. GRANDJEAN; J. MASSIES; M. LEROUX;
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Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;

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1. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AIGaN/GaN high electron mobility transistors [J] . A. L Corrion, C. Poblenz, F. Wu, Journal of Applied Physics . 2008,第9期

机译：用于AlGaN / GaN高电子迁移率晶体管的SiC衬底上通过氨分子束外延生长的GaN缓冲层的结构和形态学特性
2. Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111) [J] . Ravikiran L., Radhakrishnan K., Dharmarasu N., Journal of Applied Physics . 2013,第12期

机译：AlN / GaN应力缓解层的应变状态及其对100mm Si（111）上氨分子束外延生长的GaN缓冲层的影响
3. Strain states of AIN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111) [J] . L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, Journal of Applied Physics . 2013,第12期

机译：AIN / GaN应力缓解层的应变状态及其对100mm Si（111）上氨分子束外延生长的GaN缓冲层的影响
4. Si AND Mg DOPED GaN LAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY USING AMMONIA [C] . Symposium on nitride semiconductors . 1998

机译：Si和Mg掺杂GaN层由气源分子束外延生长使用氨
5. Photoluminescence and Electrical Properties of Impurity-doped ZnSe Layers Grown by Molecular Beam Epitaxy利用統計を見る [D] . Ohkawa Kazuhiro 1992

机译：分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
6. Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy [O] . Dingyu Ma, Xin Rong, Xiantong Zheng, -1

机译：分子束外延生长GaN基体中准2D InGaN的激子发射
7. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy [O] . Tang, H., Fang, Z.Q., Rolfe, S., 2010

机译：氨分子束外延生长无意掺杂的SiC半绝缘GaN和蓝宝石上的高电阻GaN的生长动力学和电子性质
8. Optical and Magnetic Resonance Studies of Mg-Doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. [R] . Glaser, E. R., Murthy, M., Freitas, J. J., 2007

机译：分子束外延生长mg掺杂GaN同质外延层的光学和磁共振研究。

Si AND Mg DOPED GaN LAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY USING AMMONIA

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