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首页> 外文会议>Nitride semiconductors >ELECTRICAL AND OPTICAL CHARACTERISATION OF HOMOJUNCTTON GALLIUM NITRIDE LIGHT EMITTING DIODES
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ELECTRICAL AND OPTICAL CHARACTERISATION OF HOMOJUNCTTON GALLIUM NITRIDE LIGHT EMITTING DIODES

机译：均质氮化镓氮化物发光二极管的电学和光学表征

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摘要

We report on the fabrication and characterisation gallium nitride light emitting diodes (LEDs) grown by molecular beam epitaxy on (0001) oriented sapphire and (111)B GaAs substrates. The current voltage characteristics of the devices grown on sapphire show turn on voltages of between 4 and 5V with large on-series resistance of 600Ω; for corresponding devices grown on GaAs these parameters are between 6 and 7V and 150 Ω, respectively.rnRoom temperature electroluminescence (EL) spectra from the GaN LEDs ,grown on sapphire substrates, show a dominant emission at 3.2 eV (397nm) with a full width half maximum (FWHM) of 335 meV which is attributed to free electron to acceptor transitions (e, A" Mg). A broad low intensity deep level emission is also observed centred at 2.4 eV (506nm). The peak of the EL from the devices grown on GaAs is at 3. leV rather than 3.2eV. The differences between the two sets of devices are probably caused by the different device geometry.rnPreliminary results show that an "annealing" effect caused by electrical stressing resulted in an improvement of the EL spectra. The stressed samples show an increase in the near band edge emission intensity, a 20meV reduction in the FWHM and a significant reduction in the intensity of the deep level emission. The devices have a large 1/f noise contribution which does not appear to change after electrical stressing.
机译：我们报告了在（0001）取向的蓝宝石和（111）B GaAs衬底上通过分子束外延生长的氮化镓发光二极管（LED）的制造和表征。在蓝宝石上生长的器件的当前电压特性显示导通电压在4V至5V之间，串联电阻为600Ω；对于在GaAs上生长的相应器件，这些参数分别在6V至7V与150Ω之间。rn在蓝宝石衬底上生长的GaN LED的室温电致发光（EL）光谱在3.2 eV（397nm）的全宽度下显示出主要发射半峰最大值（FWHM）为335 meV，这归因于自由电子到受体的跃迁（e，A“ Mg）。在2.4 eV（506nm）处也观察到了宽广的低强度深能级发射。在GaAs上生长的器件为3. leV而不是3.2eV。两组器件之间的差异可能是由不同的器件几何形状引起的。初步结果表明，由电应力引起的“退火”效应导致器件的改善。 EL谱图：受应力的样品显示出近频带边缘发射强度增加，FWHM降低20meV，深能级发射强度显着降低，器件的1 / f噪声贡献很大。施加电应力后，hich似乎没有变化。

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  • 来源
    《Nitride semiconductors》|1997年|1113-1118|共6页
  • 会议地点 Boston MA(US)
  • 作者

    G M Laws; J Morgan; G B Ren; I Harrison; E C Larkins; J W Orton; S E Hooper; T Cheng; C T Foxon;

  • 作者单位

    Department of Electrical and Electronic Engineering,Nottingham, Nottingham NG7 2RD,United Kingdom;

    Department of Electrical and Electronic Engineering,Nottingham, Nottingham NG7 2RD,United Kingdom;

    Department of Electrical and Electronic Engineering,Nottingham, Nottingham NG7 2RD,United Kingdom;

    Department of Electrical and Electronic Engineering,Nottingham, Nottingham NG7 2RD,United Kingdom;

    Department of Electrical and Electronic Engineering,Nottingham, Nottingham NG7 2RD,United Kingdom;

    Department of Electrical and Electronic Engineering,Nottingham, Nottingham NG7 2RD,United Kingdom;

    Department of Physics, University of, Nottingham, Nottingham NG7 2RD,United Kingdom;

    Department of Physics, University of, Nottingham, Nottingham NG7 2RD,United Kingdom;

    Department of Physics, University of, Not;

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  • 正文语种 eng
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