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DC AND MICROWAVE CHARACTERISTICS OF HIGH TRANSCONDUCTANCE ALGAN/GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS ON SIC SUBSTRATES

机译：Sic衬底上高导率Algan / GAN异质结场效应晶体管的直流和微波特性

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High quality AlGaN/GaN heterostructures have been successfully deposited on both n-and p-type SiC substrates. Heterostructure field effect transistors fabricated using these layers exhibited high channel current density (1.71 A/mm), well behaved pinch-off characteristics, and excellent extrinsic transconductance (G_m = 229 mS/mm). There is negligible channel current degradation up to a source to drAlN bias of 20 V as opposed to devices grown on sapphire substrates. The 0.25 urn gate-length devices fabricated on the heterostructures grown on p-type SiC has allowed us to extract a cutoff frequency of 53 GHz. The cutoff frequency showed little deterioration with increasing drAlN bias voltage. These results demonstrate for the first time the high frequency and high power operation potential of the heterostructure field effect transistors based on AlGaN grown on SiC.

机译：高质量的AlGaN / GaN异质结构已成功地沉积在n型和p型SiC衬底上。使用这些层制造的异质结构场效应晶体管表现出高沟道电流密度（1.71 A / mm），良好的夹断特性和出色的非本征跨导（G_m = 229 mS / mm）。与在蓝宝石衬底上生长的器件相反，直至20V的drAlN偏置源的沟道电流降级可以忽略不计。在p型SiC上生长的异质结构上制造的0.25 um栅长器件使我们能够提取53 GHz的截止频率。随着drAlN偏置电压的增加，截止频率几乎没有恶化。这些结果首次证明了在SiC上生长的基于AlGaN的异质结构场效应晶体管的高频和高功率工作潜力。

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来源
《Nitride semiconductors》|1997年|1071-1075|共6页
会议地点 Boston MA(US)
作者
Q. CHEN; J.W. YANG; M.A. KHAN; A.T. PING; I. ADESIDA;
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作者单位

APA Optics, Inc., 2950 NE 84~(th) Lane, BlAlNe, MN 55449;

Current address: ECE Department, University of South Carolina, Columbia, SC 29208;

Current address: ECE Department, University of South Carolina, Columbia, SC 29208;

ECE Department, University of Illinois, Urbana, IL 61801;

ECE Department, University of Illinois, Urbana, IL 61801;

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专利

1. DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates [J] . Ping A.T., Chen Q. IEEE Electron Device Letters . 1998,第2期

机译：在p型SiC衬底上生长的高电流AlGaN / GaN异质结构场效应晶体管的直流和微波性能
2. High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates [J] . Chen Q., Yang J.W. Electronics Letters . 1997,第16期

机译：SiC衬底上的高跨导AlGaN / GaN异质结构场效应晶体管
3. DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates [J] . Y. Irokawa, B. Luo, F. Ren Electrochemical and solid-state letters . 2004,第1期

机译：独立式GaN衬底上的AlGaN / GaN异质结构场效应晶体管的直流特性
4. DC AND MICROWAVE CHARACTERISTICS OF HIGH TRANSCONDUCTANCE ALGAN/GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS ON SIC SUBSTRATES [C] . Symposium on nitride semiconductors . 1998

机译：SIC基板上高跨导AlGaN / GaN异质结构场效应晶体管的直流和微波特性
5. Process development and characterization of AlGaN/GaN heterostructure field-effect transistors [D] . Ping, Andrew Taiann 1999

机译：AlGaN / GaN异质结构场效应晶体管的工艺开发和表征
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation [O] . Fagerlind, Martin, Rorsman, Niklas 2012

机译：照明对GaN / AlGaN / GaN异质结构和异质结构场效应晶体管电特性的影响以及通过适当的表面钝化消除
8. Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates [R] . Chichibu, S., Hazu, K. 2011

机译：m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管

DC AND MICROWAVE CHARACTERISTICS OF HIGH TRANSCONDUCTANCE ALGAN/GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS ON SIC SUBSTRATES

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