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LUMINESCENCE PROPERTIES OF As, P, AND Bi AS ISOELECTRONIC TRAPS IN GaN

机译：GaN中As，P和Bi的AS电子陷阱的发光特性

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摘要

Photoluminescence spectra of high quality GaN epilayers, grown by MOCVD on sapphire substrates and implanted by isoelectronic ions: As, P, and Bi, were investigated. Post implant annealing was done at temperatures of up to 1150 ℃, in a tube furnace under flowing NH_3 or N_2, and in a rapid thermal annealing system in ambient of N_2. The PL of GaN: P annealed at 1150 ℃ in NH_3 exhibited strong pair-type modulated structures on the short wavelength shoulder of an emission band.The band at 2.914 eV is due to the recombination of bound exciton to P-hole isoelectronic traps (P-BE), and the modulated structure results from electron-hole recombination at pairs of neutral donors and a hole on P isoelectronic traps. The PL of GaN: As, GaN: Bi showed an emission with peaks at 2.597 eV and 3.241 eV, due to the recombination of an exciton bond to As and Bi isoelectronic-hole traps. We also studied thermal quenching excitation spectra, and PL kinetics. The experimental results are discussed using a simple spherical potential-well model for isoelectronic traps: As, P, and Bi replacing nitrogen in GaN.
机译：研究了高质量GaN外延层的光致发光光谱，该层通过MOCVD在蓝宝石衬底上生长并通过等电子离子As，P和Bi注入。植入后退火在高达1150℃的温度下，在管式炉中，在流动的NH_3或N_2中以及在N_2的环境中的快速热退火系统中进行。在NH_3中1150℃退火的GaN：P的PL在发射带的短波长肩上表现出强的配对型调制结构。2.914 eV的能带是由于束缚激子与P孔等电子陷阱的复合（P -BE），并且调制结构是由中性施主对和P个等电子阱上的空穴处的电子-空穴复合产生的。 GaN：As的PL：GaN：Bi的发射峰在2.597 eV和3.241 eV处出现，这是由于激子键重新结合到As和Bi等电子空穴陷阱上。我们还研究了热淬火激发光谱和PL动力学。使用简单的球形势阱模型对等离子阱进行了实验结果讨论：As，P和Bi替代GaN中的氮。

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  • 来源
    《Nitride semiconductors》|1997年|1033-1038|共6页
  • 会议地点 Boston MA(US)
  • 作者

    W.M. Jadwisienczak; H.J. Lozykowski;

  • 作者单位

    School of Electrical Engineering Computer Science, and Condensed Matter Surface Sciences Program, Ohio University, Stocker Center, Athens, OH, 45701;

    School of Electrical Engineering Computer Science, and Condensed Matter Surface Sciences Program, Ohio University, Stocker Center, Athens, OH, 45701;

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  • 正文语种 eng
  • 中图分类 材料;
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